Conception of single-lithography and space technologies of ULSI and WSI on functional nanoelectronic and optoelectronic elements

Abstract

Dynamics and reforms by which the semiconductor industry could be transformed into next-generation manufacturing of Si deep-submicron and nanoelectronic ULSI and WSI are discussed For competitive Si ULSI and WSI the functional integration becomes a core design principle and cardinal simplification of manufacturing processes/equipment becomes a core technology principle. Concept of global single lithography (no-lithography on spacefab) technology for nanoelectronic complementary bipolar field-effect (CBFE), Vertical Merged MOS (VMMOS) and optoelectronic VMMOS (OVMMOS) increasing the packaging density for high-speed low-voltage ULSI and WSI is considered Technology and economics (Technonomics) concepts of space hyperhigh- vacuum technologies and processing in framework of flexible scalable no-lithography spacefab under condition of orbital flight are presented.