Laser-assisted bump transfer for flip chip assembly

C.H. Wang, A. Holmes, S. Gao
{"title":"Laser-assisted bump transfer for flip chip assembly","authors":"C.H. Wang, A. Holmes, S. Gao","doi":"10.1109/EMAP.2000.904137","DOIUrl":null,"url":null,"abstract":"This paper describes a novel laser-assisted bumping technique for flip chip assembly. Copper bumps, with gold bonding layers and intermediate nickel barriers, are fabricated by UV lithography and electroplating on quartz wafers with pre-deposited polyimide layers. The bumps are thermosonically bonded to their respective chips and then released from the carrier by laser machining of the polyimide layer, using laser light incident through the carrier. Bump fabrication, parallel bonding, and chip release have been successfully demonstrated for test chips having 28 peripheral I/Os on 127 /spl mu/m pitch. Visual inspection of bump cross-sections and individual bump shear test measurements have been carried out for chips bumped by the new method.","PeriodicalId":201234,"journal":{"name":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Electronic Materials and Packaging (EMAP2000) (Cat. No.00EX458)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMAP.2000.904137","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

This paper describes a novel laser-assisted bumping technique for flip chip assembly. Copper bumps, with gold bonding layers and intermediate nickel barriers, are fabricated by UV lithography and electroplating on quartz wafers with pre-deposited polyimide layers. The bumps are thermosonically bonded to their respective chips and then released from the carrier by laser machining of the polyimide layer, using laser light incident through the carrier. Bump fabrication, parallel bonding, and chip release have been successfully demonstrated for test chips having 28 peripheral I/Os on 127 /spl mu/m pitch. Visual inspection of bump cross-sections and individual bump shear test measurements have been carried out for chips bumped by the new method.
用于倒装芯片组装的激光辅助凹凸转移
本文介绍了一种用于倒装芯片组装的激光辅助碰撞技术。采用紫外光刻和电镀的方法,在预先沉积聚酰亚胺层的石英晶片上制备了带有金键合层和中间镍屏障的铜凸起。凸起通过热声键合到各自的芯片上,然后通过激光加工聚酰亚胺层,利用入射的激光从载体上释放出来。在127 /spl mu/m间距上具有28个外设I/ o的测试芯片上,凹凸制造、平行键合和芯片释放已成功演示。对采用新方法碰撞的切屑进行了碰撞截面目测和单个碰撞剪切试验测量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信