Reliability study of a GaAs MMIC amplifier

30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI:10.1109/RELPHY.1992.187665

K. Christianson, J. Roussos, W. Anderson

引用次数: 2

Abstract

Accelerated aging was used to investigated the reliability of a 2-18 GHz monolithic microwave integrated circuit amplifier. A mean time between failures of 2.5*10/sup 5/ h at a channel temperature of 125 degrees C was estimated from high-temperature accelerated RF lifetest results. Failure analysis revealed that degradation and burnout were caused by leakage currents at the GaAs surface/passivation-layer interface.<>

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一种GaAs MMIC放大器的可靠性研究

采用加速老化方法对2-18 GHz单片微波集成电路放大器的可靠性进行了研究。根据高温加速射频寿命试验结果，在通道温度为125℃时，平均故障间隔时间为2.5*10/sup 5/ h。失效分析表明，降解和烧坏是由GaAs表面/钝化层界面上的泄漏电流引起的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

30th Annual Proceedings Reliability Physics 1992

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