New Hot-Carrier Lifetime Technique for High- to Low-Supplied Voltage nMOSFETs

Abstract

In this paper, we propose to distinguish the distinct carrier degradation modes as a function of the energy range developing a complete lifetime extrapolation technique down to the low voltage operation. This provides a starting point of a more accurate modeling of CHC effects during product operations. This work shows that CHC effects in nMOSFET consist in three different regimes depending on the gate voltage (Vg). A simple way to extrapolate lifetime at nominal bias conditions from data get under accelerated stress conditions was detailed for each regime. We also propose an answer to the contradictory debate of the respective contributions of electron-electron scattering (EES) (Rauch et al., 2001) and the multiple vibrational excitation (MVE) (Hess et al., 1999) to CHC effects in the low energy range.