Capacitive sensing testability in complex memory devices

K. Parker
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引用次数: 5

Abstract

Printed circuit boards (PCB) with soldered-down arrays of advanced memory devices are growing more common and present a class of difficult testing problems to PCB manufacturing. With the large memory capacities now available, memory expansion connectors are less necessary, and many products have reduced form factors (thinness) that means upright memory DIMM arrays are being phased out. When memory devices are soldered down, they become part of the board test problem, where in the past it was only necessary to test the empty sockets that would later be populated with memory. This paper discusses a Design-for-Test (DFT) technology that can be easily applied to memory devices which is independent of the silicon, and only impacts the design of the package the memory is placed within. This means DFT can be retrofitted to memories already in production without a costly silicon design change.
复杂存储器件的电容传感可测试性
采用先进存储器件焊接阵列的印刷电路板(PCB)越来越普遍,给PCB制造带来了一系列难以测试的问题。随着大容量存储器的出现,存储器扩展连接器变得不那么必要了,而且许多产品的外形尺寸(薄度)都降低了,这意味着立式存储器DIMM阵列正在逐步淘汰。当存储设备被焊接下来时,它们成为电路板测试问题的一部分,在过去,只需要测试稍后将填充内存的空插座。本文讨论了一种可以很容易地应用于存储器件的面向测试设计(DFT)技术,该技术独立于硅,只影响存储器所在封装的设计。这意味着DFT可以改造到已经在生产的存储器中,而不需要昂贵的硅设计更改。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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