C. Wilson, F. Lazzarino, V. Truffert, T. Kirimura, J. de Marneffe, P. Verdonck, M. Hirai, K. Nakatani, M. Tada, N. Heylen, Z. El-Mekki, K. Vanstreels, E. Van Besien, I. Ciofi, M. Stucchi, K. Croes, L. Zhang, S. Demuynck, M. Ercken, K. Xu, M. Baklanov, Z. Tokei
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引用次数: 0
Abstract
In this work we integrate an advanced k=2.3 spin-on polymer at 40nm ½ pitch. K-value restoration techniques are investigated and complete k-value restoration is demonstrated using an in-situ HeH2 plasma. An EUV compatible stack and a dielectric dual hard mask scheme is developed to pattern trenches with good uniformity and low litho-etch bias. The impact of scaling the dielectric spacing and of direct CMP on time dependent dielectric breakdown is also studied.
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