Deformation analysis of QFN packages for validation of thermo-mechanical finite element simulations

Chinmay Nawghane, Thomas Moncond'huy, B. Vandevelde, P. Vernhes, R. Cruz
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Abstract

Electronic package deformation is a possible cause for reliability issues. The deformations and warpage are caused by the in-plane coefficient of thermal expansion (CTE) mismatch between epoxy molding compound (EMC) and other materials inside package. The objective of this study is to investigate the warpage in Quad flat nolead (QFN) packages and establish a correlation between projection moiré experiments and finite element simulations. FE simulations demonstrates the importance of temperature dependent material models for the warpage simulations and shows how it affect the warpage results and shape of the warping package. With the viscoelastic material model for an EMC and temperature dependent CTE, simulations illustrate the true shape of the QFN package warpage, but simulations overestimate the absolute warpage values specifically at peak temperatures. It has been identified that the dominant factor behind package warpage is the CTE difference between EMC, copper lead frame and silicon die. This paper also compares CTE measurements from experiments with FE simulations and FEA predictions are within tolerable limits of ± 1 ppm$/ ^{\circ}\mathrm{C}$ which validates the FE model.
热-机械有限元模拟验证的QFN封装变形分析
电子封装变形是造成可靠性问题的一个可能原因。环氧成型复合材料(EMC)与封装内其他材料的面内热膨胀系数(CTE)不匹配是造成器件变形和翘曲的主要原因。本研究的目的是研究Quad flat no铅(QFN)封装中的翘曲,并建立投影变形实验与有限元模拟之间的相关性。有限元模拟证明了温度依赖材料模型对翘曲模拟的重要性,并显示了它如何影响翘曲结果和翘曲包的形状。利用电磁干扰和温度相关CTE的粘弹性材料模型,模拟显示了QFN封装翘曲的真实形状,但模拟高估了峰值温度下的绝对翘曲值。已经确定,封装翘曲背后的主要因素是EMC,铜引线框架和硅芯片之间的CTE差异。本文还将实验结果与有限元模拟结果进行了比较,结果表明有限元预测结果在±1 ppm$/ ^{\circ}\ mathm {C}$的可容忍范围内,验证了有限元模型的正确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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