Performance and variability in multi-VT FinFETs using fin doping

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210127

K. Akarvardar, C. Young, D. Veksler, K. Ang, I. Ok, M. Rodgers, V. Kaushik, S. Novak, J. Nadeau, M. Baykan, H. Madan, P. Hung, T. Ngai, H. Stamper, S. Bennett, D. Franca, M. Rao, S. Gausepohl, P. Majhi, C. Hobbs, P. Kirsch, R. Jammy

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引用次数: 10

Abstract

The impact of fin doping (B, P, As) on FinFET device parameters is studied for high-K/midgap metal gate SOI FinFETs. For a fin width of ~25 nm, >;1 V VT modulation is demonstrated from accumulation mode (AM) to inversion mode (IM). IM FinFETs improve short channel FinFET electrostatics, on-off ratio, and VT variability compared to their undoped counterparts. The same parameters degrade in accumulation mode FinFETs. A VT modulation of ±0.25 V using fin B and P doping comes at the expense of 24% and 14% high field mobility penalty for NFET and PFET, respectively. For the same dose, Arsenic is found to modulate the VT more effectively than does Phosphorus. Basic modeling results show that for aggressively scaled (5 nm-wide) fins, the impact of single dopant atom on VT can be as high as 25 mV, severely challenging the viability of the technique towards the end of roadmap.

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使用翅片掺杂的多vt finfet的性能和可变性

研究了高k /中隙金属栅极SOI FinFET中掺杂(B, P, As)对器件参数的影响。当翅片宽度为~25 nm时，从累积模式(AM)到反转模式(IM)的VT调制> 1 V。与未掺杂的FinFET相比，IM FinFET改善了短通道FinFET的静电性能、通断比和VT可变性。相同的参数在积累模式的finfet中退化。使用fin B和P掺杂进行±0.25 V的VT调制，对NFET和pet分别造成24%和14%的高场迁移率损失。对于相同剂量，砷被发现比磷更有效地调节室速。基本的建模结果表明，对于大尺寸(5纳米宽)的鳍，单个掺杂原子对VT的影响可高达25 mV，严重挑战了该技术在路线图结束时的可行性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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