{"title":"An ESD preotection device using normally-on MEMS switch","authors":"T. Ikehashi, Tomohiro Saito","doi":"10.1109/SENSOR.2009.5285717","DOIUrl":null,"url":null,"abstract":"We investigate normally-off and normally-on MEMS switches as ESD protection devices. The normally-on type switch behaves as an ESD protection only when the system power is off. We show that the optimized normally-on switch realizes ≫4000V HBM-ESD robustness with parasitic capacitance as small as 1.8fF.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2009.5285717","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We investigate normally-off and normally-on MEMS switches as ESD protection devices. The normally-on type switch behaves as an ESD protection only when the system power is off. We show that the optimized normally-on switch realizes ≫4000V HBM-ESD robustness with parasitic capacitance as small as 1.8fF.