An ESD preotection device using normally-on MEMS switch

T. Ikehashi, Tomohiro Saito
{"title":"An ESD preotection device using normally-on MEMS switch","authors":"T. Ikehashi, Tomohiro Saito","doi":"10.1109/SENSOR.2009.5285717","DOIUrl":null,"url":null,"abstract":"We investigate normally-off and normally-on MEMS switches as ESD protection devices. The normally-on type switch behaves as an ESD protection only when the system power is off. We show that the optimized normally-on switch realizes ≫4000V HBM-ESD robustness with parasitic capacitance as small as 1.8fF.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2009.5285717","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

We investigate normally-off and normally-on MEMS switches as ESD protection devices. The normally-on type switch behaves as an ESD protection only when the system power is off. We show that the optimized normally-on switch realizes ≫4000V HBM-ESD robustness with parasitic capacitance as small as 1.8fF.
采用常导通MEMS开关的ESD保护装置
我们研究了常关和常开MEMS开关作为ESD保护器件。正常导通开关仅在系统掉电时起ESD保护作用。结果表明,优化后的正常导通开关实现了4000V的HBM-ESD稳健性,寄生电容小至1.8fF。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信