M. Schrodner, S. Sensfuss, H. Roth, R.-I. Stohn, W. Clemens, A. Bernds
{"title":"All-polymer field effect transistors","authors":"M. Schrodner, S. Sensfuss, H. Roth, R.-I. Stohn, W. Clemens, A. Bernds","doi":"10.1109/POLYTR.2002.1020208","DOIUrl":null,"url":null,"abstract":"Polymer field effect transistors (PFETs) were made from polymeric semiconductors, insulators and electrodes on flexible polymeric substrates. The authors present recent results of all-polymer FETs with conjugated polymers like poly(3-alkylthiophenes) as active semiconducting material. Highly resolved electrodes were patterned by lithography of conducting polymers. The on/off ratios exceed 1000 by far. The logic capability of the PFETs could be demonstrated by the realisation of inverters.","PeriodicalId":166602,"journal":{"name":"2nd International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics. POLYTRONIC 2002. Conference Proceedings (Cat. No.02EX599)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2nd International IEEE Conference on Polymers and Adhesives in Microelectronics and Photonics. POLYTRONIC 2002. Conference Proceedings (Cat. No.02EX599)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/POLYTR.2002.1020208","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Polymer field effect transistors (PFETs) were made from polymeric semiconductors, insulators and electrodes on flexible polymeric substrates. The authors present recent results of all-polymer FETs with conjugated polymers like poly(3-alkylthiophenes) as active semiconducting material. Highly resolved electrodes were patterned by lithography of conducting polymers. The on/off ratios exceed 1000 by far. The logic capability of the PFETs could be demonstrated by the realisation of inverters.