Effect of PECVD SiC and SiCN cap layer deposition on mesoporous silica ultra low k dielectric films

Abstract

It is crucial to apply cap layers with minimum permittivity to ensure a minimum effective k-value of the whole dielectric stack. Therefore, the influence of the deposition of PECVD SiC and SiCN cap layers with k < 5.0 on the electrical and chemical properties of low k dielectric films is the subject of this work.