Electron spin resonance (ESR) characterization of defects in low-k dielectrics-temperature effect

Abstract

The electron spin resonance (ESR) technique has been used for the detection and the study of paramagnetic defects in various low-k dielectrics. Whereas the studied organic polymers (SiLK(R), FLARE(R)) exhibit an ESR response as previously reported, no defects could be detected in the silicon based organo-mineral materials (MSQ, Black Diamond(R), Xerogel). A peculiar behavior is evidenced for the observed defects: (i) reversible variation of the defect concentration at air exposure/vacuum cycling, (ii) curing effect during annealing cycles.