Detecting bridging faults in dynamic CMOS circuits

J.T.-Y. Chang, E. McCluskey
{"title":"Detecting bridging faults in dynamic CMOS circuits","authors":"J.T.-Y. Chang, E. McCluskey","doi":"10.1109/IDDQ.1997.633022","DOIUrl":null,"url":null,"abstract":"New methods for detecting bridging faults in dynamic CMOS circuits are proposed. We show that resistive shorts in CMOS dynamic circuits can cause intermittent failures and reliability problems. We found that the defect coverage of resistive shorts, which we defined as the maximum detectable resistance of a short, in CMOS domino gates, can be improved by increasing the supply voltage to be about 40% higher than the normal operating voltage or by reducing the supply voltage to about 2V/sub t/, where V/sub t/ is the threshold voltage of a transistor.","PeriodicalId":429650,"journal":{"name":"Digest of Papers IEEE International Workshop on IDDQ Testing","volume":"490 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers IEEE International Workshop on IDDQ Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IDDQ.1997.633022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

New methods for detecting bridging faults in dynamic CMOS circuits are proposed. We show that resistive shorts in CMOS dynamic circuits can cause intermittent failures and reliability problems. We found that the defect coverage of resistive shorts, which we defined as the maximum detectable resistance of a short, in CMOS domino gates, can be improved by increasing the supply voltage to be about 40% higher than the normal operating voltage or by reducing the supply voltage to about 2V/sub t/, where V/sub t/ is the threshold voltage of a transistor.
动态CMOS电路中的桥接故障检测
提出了动态CMOS电路桥接故障检测的新方法。我们证明了CMOS动态电路中的电阻短路会导致间歇性故障和可靠性问题。我们发现,在CMOS多米诺门中,电阻短路的缺陷覆盖率(我们将其定义为短路的最大可检测电阻)可以通过将供电电压提高到比正常工作电压高40%左右或将供电电压降低到约2V/sub - t/来改善,其中V/sub - t/是晶体管的阈值电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信