H. Tan, P. K. Tan, E. Hendarto, S. Toh, Q.F. Wang, J.L. Cai, Q. Deng, T. H. Ng, Y. W. Goh, Z. Mai, J. Lam
{"title":"Salicidation Issue in 65nm Technology Development","authors":"H. Tan, P. K. Tan, E. Hendarto, S. Toh, Q.F. Wang, J.L. Cai, Q. Deng, T. H. Ng, Y. W. Goh, Z. Mai, J. Lam","doi":"10.1109/IPFA.2007.4378055","DOIUrl":null,"url":null,"abstract":"NiSi has replaced CoSi2 as the salicide material for 65 nm technology and beyond mainly due to its low salicide resistance for the narrow line width structures. However, it may bring along unwanted salicidation, resulting in failed transistors. This paper highlights how unwanted salicidation, also known as Ni piping, is successfully identified by physical and electrical failure analysis techniques.","PeriodicalId":334987,"journal":{"name":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"21 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2007.4378055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
NiSi has replaced CoSi2 as the salicide material for 65 nm technology and beyond mainly due to its low salicide resistance for the narrow line width structures. However, it may bring along unwanted salicidation, resulting in failed transistors. This paper highlights how unwanted salicidation, also known as Ni piping, is successfully identified by physical and electrical failure analysis techniques.