Salicidation Issue in 65nm Technology Development

H. Tan, P. K. Tan, E. Hendarto, S. Toh, Q.F. Wang, J.L. Cai, Q. Deng, T. H. Ng, Y. W. Goh, Z. Mai, J. Lam
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Abstract

NiSi has replaced CoSi2 as the salicide material for 65 nm technology and beyond mainly due to its low salicide resistance for the narrow line width structures. However, it may bring along unwanted salicidation, resulting in failed transistors. This paper highlights how unwanted salicidation, also known as Ni piping, is successfully identified by physical and electrical failure analysis techniques.
65纳米技术开发中的盐化问题
NiSi已经取代CoSi2成为65纳米及以上技术的水化物材料,主要是因为它对窄线宽结构的低水化物抗性。然而,它可能带来不必要的盐化,导致晶体管失效。本文强调了如何通过物理和电气故障分析技术成功识别不需要的盐化,也称为Ni管道。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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