True Random Number Generator Based on RRAM-Bias Current Starved Ring Oscillator

IF 2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
D. Arumí;S. Manich;A. Gómez-Pau;R. Rodríguez-Montañés;M. B. González;F. Campabadal
{"title":"True Random Number Generator Based on RRAM-Bias Current Starved Ring Oscillator","authors":"D. Arumí;S. Manich;A. Gómez-Pau;R. Rodríguez-Montañés;M. B. González;F. Campabadal","doi":"10.1109/JXCDC.2023.3320056","DOIUrl":null,"url":null,"abstract":"This work presents a resistive random access memory (RRAM)-bias current-starved ring oscillator (CSRO) as true random number generator (TRNG), where the cycle-to-cycle variability of an RRAM device is exploited as source of randomness. A simple voltage divider composed of this RRAM and a resistor is considered to bias the gate terminal of the extra transistor of every current starved (CS) inverter of the ring oscillator (RO). In this way, the delay of the inverters is modified, deriving an unpredictable oscillation frequency every time the RRAM switches to the high resistance state (HRS). The oscillation frequency is finally leveraged to extract the sequence of random bits. The design is simple and adds low area overhead. Experimental measurements are performed to analyze the cycle-to-cycle variability in the HRS. The very same measurements are subsequently used to validate the TRNG by means of electrical simulations. The obtained results passed all the National Institute of Standards and Technology randomness tests (NIST) tests without the need for postprocessing.","PeriodicalId":54149,"journal":{"name":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","volume":"9 2","pages":"92-98"},"PeriodicalIF":2.0000,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10268070","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal on Exploratory Solid-State Computational Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10268070/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

Abstract

This work presents a resistive random access memory (RRAM)-bias current-starved ring oscillator (CSRO) as true random number generator (TRNG), where the cycle-to-cycle variability of an RRAM device is exploited as source of randomness. A simple voltage divider composed of this RRAM and a resistor is considered to bias the gate terminal of the extra transistor of every current starved (CS) inverter of the ring oscillator (RO). In this way, the delay of the inverters is modified, deriving an unpredictable oscillation frequency every time the RRAM switches to the high resistance state (HRS). The oscillation frequency is finally leveraged to extract the sequence of random bits. The design is simple and adds low area overhead. Experimental measurements are performed to analyze the cycle-to-cycle variability in the HRS. The very same measurements are subsequently used to validate the TRNG by means of electrical simulations. The obtained results passed all the National Institute of Standards and Technology randomness tests (NIST) tests without the need for postprocessing.
基于rram偏置缺流环振荡器的真随机数发生器
这项工作提出了一种电阻随机存取存储器(RRAM)-偏置电流缺乏环振荡器(CSRO)作为真随机数发生器(TRNG),其中RRAM器件的周期对周期可变性被利用为随机性的来源。一个简单的分压器组成的RRAM和一个电阻被认为是偏置的额外晶体管的栅极端子的电流饿死(CS)逆变器的环形振荡器(RO)。通过这种方式,逆变器的延迟被修改,每次RRAM切换到高阻状态(HRS)时都会产生不可预测的振荡频率。最后利用振荡频率提取随机比特序列。设计简单,增加了低面积开销。进行了实验测量,以分析HRS的周期间变异性。同样的测量结果随后被用于通过电模拟来验证TRNG。所获得的结果通过了所有美国国家标准与技术研究所(NIST)的随机测试,无需进行后处理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
5.00
自引率
4.20%
发文量
11
审稿时长
13 weeks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信