2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)

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2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - 最新文献

New observations on the regular and irregular noise behavior in a resistance random access memory

Pub Date : 2014-10-01 DOI: 10.1109/IIRW.2014.7049519 Scott C. H. Chen, Y. J. Huang, S. Chung, H. Y. Lee, Y. S. Chen, F. Chen, P. Gu, M. Tsai

Reliability characterization of a commercial TaOx-based ReRAM

Pub Date : 2014-10-01 DOI: 10.1109/IIRW.2014.7049528 Yang-Scharlotta Jean, Megan Fazio, Mehran Amrbar, M. White, D. Sheldon

Physical modeling of hot-carrier degradation in nLDMOS transistors

Pub Date : 2014-10-01 DOI: 10.1109/IIRW.2014.7049511 Y. Wimmer, S. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser

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