New observations on the regular and irregular noise behavior in a resistance random access memory

Abstract

In this paper, a new type of noise, different from the conventional Random Telegraph Noise (RTN), has been found and analyzed in a resistance random access memory (RRAM). The regular RTN signal is governed by the trapping and detrapping of the electrons. It will appear regularly with a two-level current and the amplitude of the RTN is smaller. However, an abnormal noise, called giant noise, was observed from the oxygen migration. The amplitude of the giant noise is much larger than the RTN one. Also, two different types of giant noise were observed depending on the movement of the oxygen vacancies. All of the above various types of noise might play an important role in the readout error in an RRAM. Therefore, these noise effects need further attention in the design of RRAM.