Reliability characterization of a commercial TaOx-based ReRAM

Abstract

We present results of endurance and retention characterization for one of the first commercially available TaOx-based resistive memory chip in room and higher temperature environments. Data retention of the memory chip shows activation energy of 1.13eV and demonstrates an 85°C 10-year data retention even after 250,000 programming cycles. The combined program and read errors were in the range of 10-7 to 10-5 and the memory chip withstood 106 program cycles at 125°C. Overall, the reliability of this commercial resistive memory chip compares well with flash memory.