Théo Levert , Alter Zakhtser , Julien Duval , Chloé Raguenez , Stéphane Verdier , Delphine Le Cunff , Jean-Hervé Tortai , Bernard Pelissier
{"title":"椭圆偏振和XPS能量损失的杂化:SiGe, HfON和MoOx薄膜的鲁棒带隙和宽带光学常数的测定","authors":"Théo Levert , Alter Zakhtser , Julien Duval , Chloé Raguenez , Stéphane Verdier , Delphine Le Cunff , Jean-Hervé Tortai , Bernard Pelissier","doi":"10.1016/j.mee.2023.112117","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, we compare the robustness of optical constants and optical band gap determination of three different materials: SiGe, N-doped HfO<sub>2</sub> and MoO<sub>x</sub><span><span>, using the combination of two techniques: spectroscopic ellipsometry, and </span>energy loss signal (ELS) of X-ray photoelectron spectroscopy (XPS). The determination of such physical properties is achieved through the hybridization of the two techniques based on multiple Tauc-Lorentz model, applied on the whole energy range of measurement.</span></p><p>Such use of hybridized data demonstrates a new robust method to determine the band gap of the studied materials, together with the optical indices (refractive index and extinction coefficient) on a wide energy range (up to 40 eV). This method provides an extension of determination of the relevant physical quantities compared to each technique on their own.</p><p>Moreover, this algorithm is tested on limit conditions, where the energy ranges of measurement of the two respective techniques presented no overlap. Yet the use of a unique physical model still allows us to calculate the different physical quantities even on the energy range where no measurement is performed, validating the semi-predictive nature of the hybrid technique. Additional measurements under different experimental configurations validate the extended scope of such hybrid technique.</p></div>","PeriodicalId":18557,"journal":{"name":"Microelectronic Engineering","volume":null,"pages":null},"PeriodicalIF":2.6000,"publicationDate":"2023-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hybridization of ellipsometry and XPS energy loss: Robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films\",\"authors\":\"Théo Levert , Alter Zakhtser , Julien Duval , Chloé Raguenez , Stéphane Verdier , Delphine Le Cunff , Jean-Hervé Tortai , Bernard Pelissier\",\"doi\":\"10.1016/j.mee.2023.112117\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study, we compare the robustness of optical constants and optical band gap determination of three different materials: SiGe, N-doped HfO<sub>2</sub> and MoO<sub>x</sub><span><span>, using the combination of two techniques: spectroscopic ellipsometry, and </span>energy loss signal (ELS) of X-ray photoelectron spectroscopy (XPS). The determination of such physical properties is achieved through the hybridization of the two techniques based on multiple Tauc-Lorentz model, applied on the whole energy range of measurement.</span></p><p>Such use of hybridized data demonstrates a new robust method to determine the band gap of the studied materials, together with the optical indices (refractive index and extinction coefficient) on a wide energy range (up to 40 eV). This method provides an extension of determination of the relevant physical quantities compared to each technique on their own.</p><p>Moreover, this algorithm is tested on limit conditions, where the energy ranges of measurement of the two respective techniques presented no overlap. Yet the use of a unique physical model still allows us to calculate the different physical quantities even on the energy range where no measurement is performed, validating the semi-predictive nature of the hybrid technique. Additional measurements under different experimental configurations validate the extended scope of such hybrid technique.</p></div>\",\"PeriodicalId\":18557,\"journal\":{\"name\":\"Microelectronic Engineering\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2023-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronic Engineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S016793172300182X\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronic Engineering","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S016793172300182X","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Hybridization of ellipsometry and XPS energy loss: Robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films
In this study, we compare the robustness of optical constants and optical band gap determination of three different materials: SiGe, N-doped HfO2 and MoOx, using the combination of two techniques: spectroscopic ellipsometry, and energy loss signal (ELS) of X-ray photoelectron spectroscopy (XPS). The determination of such physical properties is achieved through the hybridization of the two techniques based on multiple Tauc-Lorentz model, applied on the whole energy range of measurement.
Such use of hybridized data demonstrates a new robust method to determine the band gap of the studied materials, together with the optical indices (refractive index and extinction coefficient) on a wide energy range (up to 40 eV). This method provides an extension of determination of the relevant physical quantities compared to each technique on their own.
Moreover, this algorithm is tested on limit conditions, where the energy ranges of measurement of the two respective techniques presented no overlap. Yet the use of a unique physical model still allows us to calculate the different physical quantities even on the energy range where no measurement is performed, validating the semi-predictive nature of the hybrid technique. Additional measurements under different experimental configurations validate the extended scope of such hybrid technique.
期刊介绍:
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.