钴镍纳米结构的电沉积

Bai-Feng Han, D. Ding, Yanting Zhou, Yanping He, Yuzhao Liu, Ming Li, D. Mao
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摘要

钴镍薄膜以其优异的磁性、力学和电学性能在电子工业中得到广泛应用。本文研究了衬底类型和沉积参数对电镀钴镍纳米结构形貌的影响。发现在铜晶片上可以制备出扇贝状的钴镍镀层。随着沉积时间和电流密度的增加,扇贝类贝壳沉积的倾向增加。而在硅晶片上,不能形成扇贝状的Co-Ni沉积。只有针状纳米结构才能在高电流密度的硅片上制造出来。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrodeposition of Co-Ni nanostructures
Co-Ni films are widely used in electronics industry for their excellent magnetic, mechanical and electrical properties. In this work, the influence of substrate type and deposition parameters on the morphologies of electroplating Co-Ni nanostructures was investigated. It was found that scallop shell-like Co-Ni depositions could be fabricated on copper wafers. The tendency to form the scallop shell-like depositions increased with increase of deposition time and current density. While on silicon wafers, scallop shell-like Co-Ni depositions could not form. Only acupuncture-like nanostructures could be fabricated on silicon wafers at a high current density.
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