高功率太赫兹波对器件的损伤效应

2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Pub Date : 2021-08-29 DOI:10.1109/IRMMW-THz50926.2021.9567580

X. Qi, Jingcheng Wang, P. Liang, Zheng Yan, T. Song, Wei Wang, Diwei Liu

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引用次数: 0

摘要

建立了高功率太赫兹波辐照双极晶体管的二维电热模型。模拟和分析了高功率太赫兹波注入双极晶体管的瞬态行为。从理论上观察了电场、电流密度和温度的损伤效应。详细研究了器件上的电压幅值和频率。总结了功率损伤阈值和能量损伤阈值随脉宽变化的经验公式。

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Damage Effect of Devices Induced by High Power Terahertz-wave

A two-dimensional electro-thermal model of bipolar transistor irradiated by high power terahertz wave is established. The transient behaviors of the bipolar transistor are simulated and analyzed when high power terahertz wave is injected. The damage effect of the electric field, current density and temperature are observed theoretically. The voltage amplitude and the frequency on the device are investigated in detail. Empirical formulas of power damage threshold and energy damage threshold with pulse-width are summarized.

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来源期刊

2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)

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