{"title":"铁电-电荷混合非易失性存储器中的开关动力学","authors":"K. Auluck, S. Rajwade, E. Kan","doi":"10.1109/DRC.2012.6257000","DOIUrl":null,"url":null,"abstract":"A statistical model is proposed for ferroelectric (FE) polarization switching response during program and retention in FE-charge hybrid nonvolatile memory. During the program pulse, high fields first occur in the FE layer and then transfer to tunnel oxide after FE polarization, which leads to a two-step process: (a) rapid domain switching (~1ns - 100ns) and (b) electron injection into the floating gate (~10μs - 1ms). This device can be potentially used as a dual-mode memory with a fast low-retention mode (DRAM), and a slower high-retention mode (Flash).","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"298 1","pages":"133-134"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Switching dynamics in ferroelectric-charge hybrid nonvolatile memory\",\"authors\":\"K. Auluck, S. Rajwade, E. Kan\",\"doi\":\"10.1109/DRC.2012.6257000\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A statistical model is proposed for ferroelectric (FE) polarization switching response during program and retention in FE-charge hybrid nonvolatile memory. During the program pulse, high fields first occur in the FE layer and then transfer to tunnel oxide after FE polarization, which leads to a two-step process: (a) rapid domain switching (~1ns - 100ns) and (b) electron injection into the floating gate (~10μs - 1ms). This device can be potentially used as a dual-mode memory with a fast low-retention mode (DRAM), and a slower high-retention mode (Flash).\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"298 1\",\"pages\":\"133-134\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6257000\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6257000","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Switching dynamics in ferroelectric-charge hybrid nonvolatile memory
A statistical model is proposed for ferroelectric (FE) polarization switching response during program and retention in FE-charge hybrid nonvolatile memory. During the program pulse, high fields first occur in the FE layer and then transfer to tunnel oxide after FE polarization, which leads to a two-step process: (a) rapid domain switching (~1ns - 100ns) and (b) electron injection into the floating gate (~10μs - 1ms). This device can be potentially used as a dual-mode memory with a fast low-retention mode (DRAM), and a slower high-retention mode (Flash).
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
