光刻掩模形状重建的高效贝叶斯反演

IF 1.5 2区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
N. Farchmin, M. Hammerschmidt, Philipp‐Immanuel Schneider, M. Wurm, B. Bodermann, M. Bär, S. Heidenreich
{"title":"光刻掩模形状重建的高效贝叶斯反演","authors":"N. Farchmin, M. Hammerschmidt, Philipp‐Immanuel Schneider, M. Wurm, B. Bodermann, M. Bär, S. Heidenreich","doi":"10.1117/1.JMM.19.2.024001","DOIUrl":null,"url":null,"abstract":"Abstract. Background: Scatterometry is a fast, indirect, and nondestructive optical method for quality control in the production of lithography masks. To solve the inverse problem in compliance with the upcoming need for improved accuracy, a computationally expensive forward model that maps geometry parameters to diffracted light intensities has to be defined. Aim: To quantify the uncertainties in the reconstruction of the geometry parameters, a fast-to-evaluate surrogate for the forward model has to be introduced. Approach: We use a nonintrusive polynomial chaos-based approximation of the forward model, which increases speed and thus enables the exploration of the posterior through direct Bayesian inference. In addition, this surrogate allows for a global sensitivity analysis at no additional computational overhead. Results: This approach yields information about the complete distribution of the geometry parameters of a silicon line grating, which in return allows for quantifying the reconstruction uncertainties in the form of means, variances, and higher order moments of the parameters. Conclusions: The use of a polynomial chaos surrogate allows for quantifying both parameter influences and reconstruction uncertainties. This approach is easy to use since no adaptation of the expensive forward model is required.","PeriodicalId":16522,"journal":{"name":"Journal of Micro/Nanolithography, MEMS, and MOEMS","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2020-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Efficient Bayesian inversion for shape reconstruction of lithography masks\",\"authors\":\"N. Farchmin, M. Hammerschmidt, Philipp‐Immanuel Schneider, M. Wurm, B. Bodermann, M. Bär, S. Heidenreich\",\"doi\":\"10.1117/1.JMM.19.2.024001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract. Background: Scatterometry is a fast, indirect, and nondestructive optical method for quality control in the production of lithography masks. To solve the inverse problem in compliance with the upcoming need for improved accuracy, a computationally expensive forward model that maps geometry parameters to diffracted light intensities has to be defined. Aim: To quantify the uncertainties in the reconstruction of the geometry parameters, a fast-to-evaluate surrogate for the forward model has to be introduced. Approach: We use a nonintrusive polynomial chaos-based approximation of the forward model, which increases speed and thus enables the exploration of the posterior through direct Bayesian inference. In addition, this surrogate allows for a global sensitivity analysis at no additional computational overhead. Results: This approach yields information about the complete distribution of the geometry parameters of a silicon line grating, which in return allows for quantifying the reconstruction uncertainties in the form of means, variances, and higher order moments of the parameters. Conclusions: The use of a polynomial chaos surrogate allows for quantifying both parameter influences and reconstruction uncertainties. This approach is easy to use since no adaptation of the expensive forward model is required.\",\"PeriodicalId\":16522,\"journal\":{\"name\":\"Journal of Micro/Nanolithography, MEMS, and MOEMS\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2020-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Micro/Nanolithography, MEMS, and MOEMS\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1117/1.JMM.19.2.024001\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Micro/Nanolithography, MEMS, and MOEMS","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1117/1.JMM.19.2.024001","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 5

摘要

摘要背景:散射法是一种快速、间接、无损的光学方法,用于光刻掩模生产的质量控制。为了解决逆问题,以满足即将到来的提高精度的需要,必须定义一个计算成本很高的正演模型,该模型将几何参数映射到衍射光强度。目的:为了量化几何参数重建中的不确定性,必须引入一种快速评估的正演模型替代物。方法:我们使用基于混沌的非侵入性多项式逼近正向模型,这提高了速度,从而可以通过直接贝叶斯推理来探索后验。此外,该代理允许在没有额外计算开销的情况下进行全局敏感性分析。结果:这种方法产生了关于硅线光栅几何参数完整分布的信息,这反过来又允许以参数的均值、方差和高阶矩的形式量化重建不确定性。结论:使用多项式混沌替代物可以量化参数影响和重建不确定性。这种方法很容易使用,因为不需要对昂贵的前向模型进行调整。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Efficient Bayesian inversion for shape reconstruction of lithography masks
Abstract. Background: Scatterometry is a fast, indirect, and nondestructive optical method for quality control in the production of lithography masks. To solve the inverse problem in compliance with the upcoming need for improved accuracy, a computationally expensive forward model that maps geometry parameters to diffracted light intensities has to be defined. Aim: To quantify the uncertainties in the reconstruction of the geometry parameters, a fast-to-evaluate surrogate for the forward model has to be introduced. Approach: We use a nonintrusive polynomial chaos-based approximation of the forward model, which increases speed and thus enables the exploration of the posterior through direct Bayesian inference. In addition, this surrogate allows for a global sensitivity analysis at no additional computational overhead. Results: This approach yields information about the complete distribution of the geometry parameters of a silicon line grating, which in return allows for quantifying the reconstruction uncertainties in the form of means, variances, and higher order moments of the parameters. Conclusions: The use of a polynomial chaos surrogate allows for quantifying both parameter influences and reconstruction uncertainties. This approach is easy to use since no adaptation of the expensive forward model is required.
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来源期刊
CiteScore
3.40
自引率
30.40%
发文量
0
审稿时长
6-12 weeks
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