1.3 /spl mu/m (GaIn)(NAs)/GaAs半导体激光器的物理学

M. Hofmann, N. Gerhardt, A. Wagner, W. Stolz, S. Koch, W. Ruhle, J. Hader, J. Moloney, H. Schneider, W. Chow
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摘要

只提供摘要形式。实验研究了1.3 /spl mu/m (GaIn)(NAs)/GaAs VCSEL生长的光泵MOCVD的发射动力学,特别关注了发射的温度依赖性。我们使用100 fs的Ti:蓝宝石激光器光激发来测量VCSEL的发射动力学。室温下的动态在皮秒范围内(激发后的峰值延迟时间为15.5 ps,脉冲宽度为10.5 ps)。此外,我们发现在30 K到388 K之间的温度下,激光发射具有皮秒动力学。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Physics of 1.3 /spl mu/m (GaIn)(NAs)/GaAs semiconductor lasers
Summary form only given. We study experimentally the emission dynamics of an optically pumped MOCVD grown 1.3 /spl mu/m (GaIn)(NAs)/GaAs VCSEL with a particular focus on the temperature dependence of the emission. We use optical excitation with a 100 fs Ti:sapphire laser to measure the emission dynamics of our VCSEL. The dynamics at room temperature are in the picosecond range (peak delay-time of 15.5 ps after excitation and pulse width of 10.5 ps). Moreover, we find laser emission with picosecond dynamics for temperatures between 30 K and 388 K.
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