{"title":"聚(9,9 -二辛基芴-二噻吩)(F8T2)表征PTFT逆变器的直流和交流特性","authors":"M. Avila, M. Estrada, A. Cerdeira, L. Reséndiz","doi":"10.1109/CDE.2013.6481368","DOIUrl":null,"url":null,"abstract":"Poly(9, 9-dioctylfluorene-co-Bithiophene) (F8T2) is used for the fabrication of p-type Polymeric Thin-Film Transistors (PTFT's), which can show high Ion/Ioff ratio in the transfer characteristics. In this work the Active Saturated Load Inverter (ASLI), fabricated with Poly (methyl methacrylate) (PMMA) as the dielectric film and F8T2 as the active semiconductor PTFTs, is analyzed and simulated using SmartSpice, where a compact model, UMEM, previously developed by our group was included. Specifics of the AC measurements of these devices are discussed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"52 1","pages":"163-166"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DC and AC characterization of PTFT inverters using Poly(9, 9-dioctylfluorene-co-Bithiophene) (F8T2)\",\"authors\":\"M. Avila, M. Estrada, A. Cerdeira, L. Reséndiz\",\"doi\":\"10.1109/CDE.2013.6481368\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Poly(9, 9-dioctylfluorene-co-Bithiophene) (F8T2) is used for the fabrication of p-type Polymeric Thin-Film Transistors (PTFT's), which can show high Ion/Ioff ratio in the transfer characteristics. In this work the Active Saturated Load Inverter (ASLI), fabricated with Poly (methyl methacrylate) (PMMA) as the dielectric film and F8T2 as the active semiconductor PTFTs, is analyzed and simulated using SmartSpice, where a compact model, UMEM, previously developed by our group was included. Specifics of the AC measurements of these devices are discussed.\",\"PeriodicalId\":6614,\"journal\":{\"name\":\"2013 Spanish Conference on Electron Devices\",\"volume\":\"52 1\",\"pages\":\"163-166\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CDE.2013.6481368\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481368","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
DC and AC characterization of PTFT inverters using Poly(9, 9-dioctylfluorene-co-Bithiophene) (F8T2)
Poly(9, 9-dioctylfluorene-co-Bithiophene) (F8T2) is used for the fabrication of p-type Polymeric Thin-Film Transistors (PTFT's), which can show high Ion/Ioff ratio in the transfer characteristics. In this work the Active Saturated Load Inverter (ASLI), fabricated with Poly (methyl methacrylate) (PMMA) as the dielectric film and F8T2 as the active semiconductor PTFTs, is analyzed and simulated using SmartSpice, where a compact model, UMEM, previously developed by our group was included. Specifics of the AC measurements of these devices are discussed.
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