新的和独特的CMP材料解决方案,使高去除率的聚合物CMP和其他先进的包装应用

T. Chakraborty, P. Goradia, S. Verhaverbeke, Han-Wen Chen, C. Buch, Prayudi Lianto
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引用次数: 3

摘要

高分子材料,如环氧模化合物(EMC),聚酰亚胺(PI)用于先进的包装应用。化学机械刨平(CMP)是一种去除不希望的表面形貌和表面缺陷以及通过去除多余沉积材料在基材上形成特征的方法。然而,传统CMP对聚合物的去除率太低,无法应用于先进的封装技术。开发了一种新型浆料系统。采用新型浆料进行高速机械磨损进行粗抛光,采用常规聚合物CMP技术进行细抛光。EMC的去除率超过$10\ \mu \mathrm{m}/\min$,比传统CMP工艺的去除率大约高一个数量级。最后的精细抛光步骤与规则的CMP浆料几乎恢复了初始粗糙度的情况下PI。该新型浆料对多种底物的去除率较高,对铜的PI去除率约为7:1。与单独磨削相比,该解决方案可以将磨削和CMP集成在一个平台上,具有更多的过程控制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New and Unique CMP Material Solution for the Enablement of High Removal Rate Polymer CMP and other Advanced Packaging Applications
Polymer materials like epoxy mold compounds (EMC), polyimides (PI) are used in the advanced packaging applications. Chemical mechanical planarization (CMP) is a process useful in removing undesired surface topography and surface defects and in forming features on a substrate by removing excess deposited material. However, removal rates (RR) of polymers are too low by conventional CMP to be useful in advanced packaging technology. A novel slurry system has been developed. A two-step sequence combining both high-speed mechanical abrasion with novel slurries for coarse polishing and conventional polymer CMP technology for final fine polishing has been evaluated. A removal rate of more than $10\ \mu \mathrm{m}/\min$ has been observed for EMC which is roughly one order of magnitude higher than that obtained with conventional CMP process. A final fine polish step with a regular CMP slurry has almost restored the initial roughness in case of PI. The novel slurry has shown high RR for multiple substrates and has shown about 7:1 selectivity for PI removal against copper. This solution can bring grinding and CMP under one platform with more process control compared to grinding alone.
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