Electrical control of nuclear-spin-induced Hall voltage in an inverted InAs heterostructure

We have fabricated a nuclear spin manipulation device by spin injection from ferromagnetic (FM) electrode into in InAs channel and the operation was confirmed by Hall voltage near the FM/semiconductor interface. Injected electron spins are transferred to nuclear spin angular momentum by hyperfine interaction known as Overhauser effect. [1] Previously, it was reported that nuclear spin polarization in semiconductor by edge current in quantum Hall state [2] and nonlocal lateral spin valve configuration. [3] Compared with these samples working only in extreme conditions, we propose a nuclear spin device, which is electrically controllable at room temperature. Spin induced local magnetic filed was estimated to be the order of kGauss, resulting in a few tens of mV range in Hall voltage [4-5]. Electrical manipulation of local nuclear spin angular momentum would provide a new horizon on device applications of spintronics.