Sm2Te3 - GeTe相平衡

Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases Pub Date : 2019-06-15 DOI:10.17308/KCMF.2019.21/770

Z. Mukhtarova

{"title":"Sm2Te3 - GeTe相平衡","authors":"Z. Mukhtarova","doi":"10.17308/KCMF.2019.21/770","DOIUrl":null,"url":null,"abstract":"Методами физико-химического анализа – дифференциально-термическим, высокотемпературным дифференциально-термическим, рентгенофазовым, микроструктурным, а также измерением микротвердости изучена система Sm2Te3–GeTe, которая является квазибинарным сечением тройной системы Ge–Sm–Te. При соотношении исходных теллуридов 1:1 (50 мол. %) и температуре 1100 К по перитектической реакции ж+Sm2Te3→ GeSm2Te4 образуется тройное соединение GeSm2Te4. Образцы системы, богатые GeTe, представляют собой компактные слитки блестяще-серого цвета, а сплавы, бо-гатые Sm2Te3 – спек черного цвета. Ликвидус системы Sm2Te3–GeTe состоит из трех ветвей: Sm2Te3, GeSm2Te4 и a-твердых растворов на основе GeTe. Рентгенофазовый анализ закристаллизованных образцов показал, что набор рентгеновских отражений соответствует фазам Sm2Te3, GeSm2Te4 и a-твердых растворов на основе GeTe. Установлено образование инконгруэнтно плавящегося соединения состава GeSm2Te4, которое может использоваться как термоэлектрический материал. На основе GeTe образуется узкая область твердого раствора \n \nREFERENCES \n \nKohri H., Shiota , Kato M., Ohsugi J., Goto T. Synthesis and Thermolelectric Properties of Bi2Te3–GeTe Pseudo Binary System. Advances in Science and Technology, 2006, v. 46, pp. 168-173. https://doi.org/10.4028/www.scientifi c.net/ST.46.168 \nGelbstein Y., Dado B., Ben-Yehuda O., Sadia Y., Dashevsky Z. and Dariel M. P. Highly effi cient Ge-Rich GexPb1-x Te thermoelectric alloys. Journal of Electronic Materials, 2010, v. 39(9), pp. 2049–2052. https://doi.org/10.1007/s11664-009-1012-z \nGelbstein Y., Davidow J., Girard S.N., Chung D. Y. and Kanatzidis M. Controlling Metallurgical Phase Separation Reactions of the Ge0.87 Pb0.13Te Alloy for High Thermoelectric Performance. Advanced Energy Materials, 2013, v. 3, pp. 815–820. https://doi.org/10.1002/aenm.201200970 \nGelbstein Y., Dashevsky Z. and Dariel M. P. Highly efficient bismuth telluride doped p-type Pb0.13Ge0.87Te for thermoelectric applications. Physical Status Solidi, 2007, v. 1(6), pp. 232–234. https://doi.org/10.1002/pssr.200701160 \nGelbstein Y., Ben-Yehuda O., Dashevsky Z. and Dariel M. P. Phase transitions of p-type (Pb,Sn,Ge)Tebased alloys for thermoelectric applica tions. Journal of Crystal Growth, 2009, v. 311(18), pp. 4289–4292. https://doi.org/10.1007/s11664-008-0652-8 \nGelbstein Y., Ben-Yehuda O., Pinhas E., et al. Thermoelectric properties of (Pb,Sn,Ge) Te-based alloys. Journal of Electronic Materials, 2009, v. 38(7), 1478–1482. https://doi.org/10.1007/s11664-008-0652-8 \nLi J., Chen Z., Zhang X., Sun Y., Yang J., Pei Y. Electronic origin of the high thermo- electric performance of GeTe among the p-type group IV monotellurides. NPG Asia Materials, 2017, v. 9, p. 353. https://doi.org/10.1038/am.2017.8 \nSante D. Di., Barone P., Bertacco R., Picozzi S. Electric control of the giant rashba effect in bulk GeTe. Advanced materials, 2013, v. 25(27), pp. 3625–3626. https://doi.org/10.1002/adma.201203199 \nLi J., Zhang X., Lin S., Chen Z., Pei Y. Realizing the high thermoelectric performance of GeTe by Sbdoping and Se-alloying. Mater., 2017, v. 29(2), pp. 605–611. https://doi.org/10.1021/acs.chemmater.6b04066 \nAbrikosov N. Kh., Shelimova L. B. Poluprovodnikovye materialy na osnove soedineniy AIV BVI. [Semiconductor materials based on compounds АIV В]. Moscow, Nauka Publ., 1975, 195 p. (in Russ.) \nKorzhuev M. A. Vliyaniye legirovaniya na parametric of GeTe. Series 6. [Effect of doping on GeTe Series 6]. Moscow, 1983, no. 6 (179), pp. 33–36. (in Russ.) \nOkoye I. Electronic and optical properties of SnTe and GeTe. Journal of Physics: Condensed Matter, 2002, 14(36), pp. 8625–8637. https://doi.org/10.1088/0953-8984/14/36/318 \nGelbstein Y., Rosenberg Y., Sadia Y. and Dariel M. P. Thermoelectric properties evolution of spark plasma sintered (Ge0.6Pb0.3Sn0.1)Te following a spinodal decomposition. Journal of Physical Chemistry, 2010, v. 114(30), pp. 13126–13131. https://doi.org/10.1021/jp103697s \nRosenthal T., Schneider N., Stiewe C., Düblinger M., Oeckler O. Real Structure and thermoelectric properties of GeTe-rich germanium antimony tellurides. Mater., 2011, v. 23(19), pp. 4349–4356. https://doi.org/10.1021/cm201717z \nLi J., Chen Z., Zhang X., Yu H., Wu Z., Xie H., Chen Y., Pei Y. Simultaneous optimization of carrier concentration and alloy scattering for ultrahigh. Mater., 2017, v. 4(12), p. 341. https://doi.org/10.1002/advs.201700341 \nBletskan D. I. Phase equilibrium in the system AIV-BVI-part II: systems germanium-chalcogen. Journal of Ovonic Research, 2005, v. 1(5), p. 53–60. \nLi S. P., Li J. Q., Wang Q. B., Wang L., Liu F. S., Ao W. Q. Synthesis and thermoelectric properties of the (GeTe)1-x(PbTe)x alloys. Solid State Sciences, 2011, v. 13(2), pp. 399–403. https://doi.org/10.1016/j.solidstatesciences. 2010.11.045 \nGelbstein Y., Dado B., Ben-Yehuda O., Sadia Y., Dashevsky Z., Dariel M. P. High thermoelectric fi gure of merit and nanostructuring in bulk p-type Gex(SnyPb1–y)1–x Te alloys following a spinodal decomposition reaction. Chemistry of Materials, 2010, v. 22(3), pp. 1054–1058. https://doi.org/10.1021/cm902009t \nYarembash E. I., Eliseev A. A. Khal’kogenidy redkozemel’nykh elementov: sintez i kristallokhimiya [Chalcogenides of rare-earth elements: synthesis and crystal chemistry]. Moscow, Nauka Publ., 1975, p. 258. (in Russ.) \nMukhtarova Z. M., Bakhtiyarly I. B., Azhdarova D. S. Politermicheskoye secheniye Ge0.80 Te0.20–Sm0.80 Te0.20. khim. zhurn., 2010, no. 4, pp. 144–146. \nMukhtarova Z. M., Bakhtiyarly I. B., Azhdarova D. S. Issledovaniye politermicheskogo secheniye Ge0.84Te0.16–Sm5Ge2Te7 v troynoy sisteme Ge–Te–Sm. Aze-rb. khim. zhurn., 2011, no. 4, pp. 57–59. \n","PeriodicalId":17879,"journal":{"name":"Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases","volume":"36 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Фазовые равновесия в системе Sm2Te3–GeTe\",\"authors\":\"Z. Mukhtarova\",\"doi\":\"10.17308/KCMF.2019.21/770\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Методами физико-химического анализа – дифференциально-термическим, высокотемпературным дифференциально-термическим, рентгенофазовым, микроструктурным, а также измерением микротвердости изучена система Sm2Te3–GeTe, которая является квазибинарным сечением тройной системы Ge–Sm–Te. При соотношении исходных теллуридов 1:1 (50 мол. %) и температуре 1100 К по перитектической реакции ж+Sm2Te3→ GeSm2Te4 образуется тройное соединение GeSm2Te4. Образцы системы, богатые GeTe, представляют собой компактные слитки блестяще-серого цвета, а сплавы, бо-гатые Sm2Te3 – спек черного цвета. Ликвидус системы Sm2Te3–GeTe состоит из трех ветвей: Sm2Te3, GeSm2Te4 и a-твердых растворов на основе GeTe. Рентгенофазовый анализ закристаллизованных образцов показал, что набор рентгеновских отражений соответствует фазам Sm2Te3, GeSm2Te4 и a-твердых растворов на основе GeTe. Установлено образование инконгруэнтно плавящегося соединения состава GeSm2Te4, которое может использоваться как термоэлектрический материал. На основе GeTe образуется узкая область твердого раствора \\n \\nREFERENCES \\n \\nKohri H., Shiota , Kato M., Ohsugi J., Goto T. Synthesis and Thermolelectric Properties of Bi2Te3–GeTe Pseudo Binary System. Advances in Science and Technology, 2006, v. 46, pp. 168-173. https://doi.org/10.4028/www.scientifi c.net/ST.46.168 \\nGelbstein Y., Dado B., Ben-Yehuda O., Sadia Y., Dashevsky Z. and Dariel M. P. Highly effi cient Ge-Rich GexPb1-x Te thermoelectric alloys. Journal of Electronic Materials, 2010, v. 39(9), pp. 2049–2052. https://doi.org/10.1007/s11664-009-1012-z \\nGelbstein Y., Davidow J., Girard S.N., Chung D. Y. and Kanatzidis M. Controlling Metallurgical Phase Separation Reactions of the Ge0.87 Pb0.13Te Alloy for High Thermoelectric Performance. Advanced Energy Materials, 2013, v. 3, pp. 815–820. https://doi.org/10.1002/aenm.201200970 \\nGelbstein Y., Dashevsky Z. and Dariel M. P. Highly efficient bismuth telluride doped p-type Pb0.13Ge0.87Te for thermoelectric applications. Physical Status Solidi, 2007, v. 1(6), pp. 232–234. https://doi.org/10.1002/pssr.200701160 \\nGelbstein Y., Ben-Yehuda O., Dashevsky Z. and Dariel M. P. Phase transitions of p-type (Pb,Sn,Ge)Tebased alloys for thermoelectric applica tions. Journal of Crystal Growth, 2009, v. 311(18), pp. 4289–4292. https://doi.org/10.1007/s11664-008-0652-8 \\nGelbstein Y., Ben-Yehuda O., Pinhas E., et al. Thermoelectric properties of (Pb,Sn,Ge) Te-based alloys. Journal of Electronic Materials, 2009, v. 38(7), 1478–1482. https://doi.org/10.1007/s11664-008-0652-8 \\nLi J., Chen Z., Zhang X., Sun Y., Yang J., Pei Y. Electronic origin of the high thermo- electric performance of GeTe among the p-type group IV monotellurides. NPG Asia Materials, 2017, v. 9, p. 353. https://doi.org/10.1038/am.2017.8 \\nSante D. Di., Barone P., Bertacco R., Picozzi S. Electric control of the giant rashba effect in bulk GeTe. Advanced materials, 2013, v. 25(27), pp. 3625–3626. https://doi.org/10.1002/adma.201203199 \\nLi J., Zhang X., Lin S., Chen Z., Pei Y. Realizing the high thermoelectric performance of GeTe by Sbdoping and Se-alloying. Mater., 2017, v. 29(2), pp. 605–611. https://doi.org/10.1021/acs.chemmater.6b04066 \\nAbrikosov N. Kh., Shelimova L. B. Poluprovodnikovye materialy na osnove soedineniy AIV BVI. [Semiconductor materials based on compounds АIV В]. Moscow, Nauka Publ., 1975, 195 p. (in Russ.) \\nKorzhuev M. A. Vliyaniye legirovaniya na parametric of GeTe. Series 6. [Effect of doping on GeTe Series 6]. Moscow, 1983, no. 6 (179), pp. 33–36. (in Russ.) \\nOkoye I. Electronic and optical properties of SnTe and GeTe. Journal of Physics: Condensed Matter, 2002, 14(36), pp. 8625–8637. https://doi.org/10.1088/0953-8984/14/36/318 \\nGelbstein Y., Rosenberg Y., Sadia Y. and Dariel M. P. Thermoelectric properties evolution of spark plasma sintered (Ge0.6Pb0.3Sn0.1)Te following a spinodal decomposition. Journal of Physical Chemistry, 2010, v. 114(30), pp. 13126–13131. https://doi.org/10.1021/jp103697s \\nRosenthal T., Schneider N., Stiewe C., Düblinger M., Oeckler O. Real Structure and thermoelectric properties of GeTe-rich germanium antimony tellurides. Mater., 2011, v. 23(19), pp. 4349–4356. https://doi.org/10.1021/cm201717z \\nLi J., Chen Z., Zhang X., Yu H., Wu Z., Xie H., Chen Y., Pei Y. Simultaneous optimization of carrier concentration and alloy scattering for ultrahigh. Mater., 2017, v. 4(12), p. 341. https://doi.org/10.1002/advs.201700341 \\nBletskan D. I. Phase equilibrium in the system AIV-BVI-part II: systems germanium-chalcogen. Journal of Ovonic Research, 2005, v. 1(5), p. 53–60. \\nLi S. P., Li J. Q., Wang Q. B., Wang L., Liu F. S., Ao W. Q. Synthesis and thermoelectric properties of the (GeTe)1-x(PbTe)x alloys. Solid State Sciences, 2011, v. 13(2), pp. 399–403. https://doi.org/10.1016/j.solidstatesciences. 2010.11.045 \\nGelbstein Y., Dado B., Ben-Yehuda O., Sadia Y., Dashevsky Z., Dariel M. P. High thermoelectric fi gure of merit and nanostructuring in bulk p-type Gex(SnyPb1–y)1–x Te alloys following a spinodal decomposition reaction. Chemistry of Materials, 2010, v. 22(3), pp. 1054–1058. https://doi.org/10.1021/cm902009t \\nYarembash E. I., Eliseev A. A. Khal’kogenidy redkozemel’nykh elementov: sintez i kristallokhimiya [Chalcogenides of rare-earth elements: synthesis and crystal chemistry]. Moscow, Nauka Publ., 1975, p. 258. (in Russ.) \\nMukhtarova Z. M., Bakhtiyarly I. B., Azhdarova D. S. Politermicheskoye secheniye Ge0.80 Te0.20–Sm0.80 Te0.20. khim. zhurn., 2010, no. 4, pp. 144–146. \\nMukhtarova Z. M., Bakhtiyarly I. B., Azhdarova D. S. Issledovaniye politermicheskogo secheniye Ge0.84Te0.16–Sm5Ge2Te7 v troynoy sisteme Ge–Te–Sm. 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引用次数: 0

摘要

物理化学分析——热、热、x射线、微硬度和微硬度测量——研究了Sm2Te3 - GeTe系统，这是三重通用- Sm - Te的准二进制截面。在1比1 (50 mos)中，最初的特鲁里德数。1100 k是由j +Sm2Te3 GeSm2Te4形成的三重化合物GeSm2Te4。系统的样品，丰富的GeTe，是一种精细的灰色金条，而合金，Sm2Te3是黑色的。Sm2Te3 - GeTe由三个分支组成:Sm2Te3、GeSm2Te4和a-固体溶液。结晶样品的x射线分析显示，x射线反射与Sm2Te3、GeSm2Te4和a-固体溶液相匹配。在GeSm2Te4中发现了一种完全融化的化合物，可以用作热电材料。= =结构= = GeTe形成了一个狭窄的固体溶液区域，由REFERENCES Kohri H、Shiota、Kato M和Ohsugi J组成。科学和技术进步，2006年，v46, pp, 168-173。https://doi.org/10.4028/www.scientifi c.net/ST.46.168 Gelbstein Y。B Dado, Ben - Yehuda O Sadia Y。Dashevsky z and Dariel m . p . Highly effi cient Ge - Rich GexPb1 x Te thermoelectric alloys。2010年，v39 (9)， pp, 2049 - 2052。https://doi.org/10.1007/s11664-009-1012-z Gelbstein Y。Davidow J,吉拉德S.N。Chung d Y and Kanatzidis m Controlling Metallurgical Separation阶段Reactions of the Ge0.87 Pb0.13Te Alloy for High Thermoelectric Performance。先进的能量物质，2013年，v3, pp, 815 - 820。https://doi.org/10.1002/aenm.201200970 Gelbstein Y。Dashevsky z and Dariel m . p . Highly efficient bismuth柳赖德doped p - type Pb0.13Ge0.87Te for thermoelectric应用。物理静态索利迪，2007年，v1 (6)， pp, 232 - 234。https://doi.org/10.1002/pssr.200701160 Gelbstein Y, Ben - Yehuda O。Dashevsky z and Dariel m . p . transitions阶段of p - type (Pb、Sn、Ge) Tebased alloys for thermoelectric applica tions。《水晶生长杂志》，2009年，v311 (18)， pp, 4289 - 4292。https://doi.org/10.1007/s11664-008-0652-8 Gelbstein Y, Ben - Yehuda O。Pinhas E, et al .)。Thermoelectric properties (Pb,Sn,Ge)。《电子物质杂志》，2009年，v38(7)， 1478 - 1482。https://doi.org/10.1007/s11664-008-0652-8 Li J。Sun Chen Z, Zhang X, Y,杨J Pei Y Electronic origin of the high thermo - electric performance of GeTe《the p - type IV monotellurides集团。NPG亚洲物质，2017,v9, p 353。https://doi.org/10.1038/am.2017.8 Sante d . Di。Barone P, Bertacco R, Picozzi S. Electric控制公牛GeTe中的巨大rashba。高级物质，2013年，v25 (27)， pp, 3625 - 3626。https://doi.org/10.1002/adma.201203199 Li J, Zhang X。Lin S Chen Z。Pei y Realizing the high thermoelectric performance of GeTe by Sbdoping and Se - alloying。母校。2017年，v29 (2)， pp, 605 - 611。https://doi.org/10.1021/acs.chemmater.6b04066 Abrikosov n . Kh。Shelimova L. b。* * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * *莫斯科，Nauka Publ。1975年，195个pKorzhuev A. Vliyaniye legirovaniya na na。Series 6。(《GeTe系列6》中的其他内容)。1983年莫斯科no。6 (179)， pp, 33 - 36。(in Russ。)SnTe和GeTe的电子和optical预览。《物理杂志》，2002年，14(36)，pp, 8625 - 8637。https://doi.org/10.1088/0953-8984/14/36/318 Gelbstein Y, Y的罗森。,Sadia Y and Dariel m . p . (Thermoelectric evolution of spark plasma sintered (Ge0.6Pb0.3Sn0.1) Te 42,269 a spinodal decomposition。2010年，v114 (30)， pp, 13126 - 13131。https://doi.org/10.1021/jp103697s Rosenthal T, Schneider N。Stiewe C、Dublinger M。,Oeckler o . Real结构and (thermoelectric of GeTe - rich germanium antimony tellurides。母校。2011年，v23 (19)， pp 4349 - 4356。https://doi.org/10.1021/cm201717z Li J Z, Zhang X。Chen Yu Wu Z H。谢谢H。Y。Chen, Pei Y . Simultaneous optimization of航母集中and alloy动量scattering for ultrahigh。母校。2017年，v4 (12)， p. 341。https://doi.org/10.1002/advs.201700341 Bletskan d i equilibrium in the system AIV阶段- BVI part II: systems germanium chalcogen。Ovonic研究杂志，2005年，v1 (5)， p(53 - 60)。Li S. P.， Li J. Q.， Wang qb, Wang F. S，Solid状态科学，2011年，v13 (2)， pp, 399 - 403。https://doi.org/10.1016/j.solidstatesciences。2010年11月11日045日，吉布斯坦Y，本·Yehuda O, Sadia Y, Dashevsky Z, Dariel M. P。

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Фазовые равновесия в системе Sm2Te3–GeTe

Методами физико-химического анализа – дифференциально-термическим, высокотемпературным дифференциально-термическим, рентгенофазовым, микроструктурным, а также измерением микротвердости изучена система Sm2Te3–GeTe, которая является квазибинарным сечением тройной системы Ge–Sm–Te. При соотношении исходных теллуридов 1:1 (50 мол. %) и температуре 1100 К по перитектической реакции ж+Sm2Te3→ GeSm2Te4 образуется тройное соединение GeSm2Te4. Образцы системы, богатые GeTe, представляют собой компактные слитки блестяще-серого цвета, а сплавы, бо-гатые Sm2Te3 – спек черного цвета. Ликвидус системы Sm2Te3–GeTe состоит из трех ветвей: Sm2Te3, GeSm2Te4 и a-твердых растворов на основе GeTe. Рентгенофазовый анализ закристаллизованных образцов показал, что набор рентгеновских отражений соответствует фазам Sm2Te3, GeSm2Te4 и a-твердых растворов на основе GeTe. Установлено образование инконгруэнтно плавящегося соединения состава GeSm2Te4, которое может использоваться как термоэлектрический материал. На основе GeTe образуется узкая область твердого раствора REFERENCES Kohri H., Shiota , Kato M., Ohsugi J., Goto T. Synthesis and Thermolelectric Properties of Bi2Te3–GeTe Pseudo Binary System. Advances in Science and Technology, 2006, v. 46, pp. 168-173. https://doi.org/10.4028/www.scientifi c.net/ST.46.168 Gelbstein Y., Dado B., Ben-Yehuda O., Sadia Y., Dashevsky Z. and Dariel M. P. Highly effi cient Ge-Rich GexPb1-x Te thermoelectric alloys. Journal of Electronic Materials, 2010, v. 39(9), pp. 2049–2052. https://doi.org/10.1007/s11664-009-1012-z Gelbstein Y., Davidow J., Girard S.N., Chung D. Y. and Kanatzidis M. Controlling Metallurgical Phase Separation Reactions of the Ge0.87 Pb0.13Te Alloy for High Thermoelectric Performance. Advanced Energy Materials, 2013, v. 3, pp. 815–820. https://doi.org/10.1002/aenm.201200970 Gelbstein Y., Dashevsky Z. and Dariel M. P. Highly efficient bismuth telluride doped p-type Pb0.13Ge0.87Te for thermoelectric applications. Physical Status Solidi, 2007, v. 1(6), pp. 232–234. https://doi.org/10.1002/pssr.200701160 Gelbstein Y., Ben-Yehuda O., Dashevsky Z. and Dariel M. P. Phase transitions of p-type (Pb,Sn,Ge)Tebased alloys for thermoelectric applica tions. Journal of Crystal Growth, 2009, v. 311(18), pp. 4289–4292. https://doi.org/10.1007/s11664-008-0652-8 Gelbstein Y., Ben-Yehuda O., Pinhas E., et al. Thermoelectric properties of (Pb,Sn,Ge) Te-based alloys. Journal of Electronic Materials, 2009, v. 38(7), 1478–1482. https://doi.org/10.1007/s11664-008-0652-8 Li J., Chen Z., Zhang X., Sun Y., Yang J., Pei Y. Electronic origin of the high thermo- electric performance of GeTe among the p-type group IV monotellurides. NPG Asia Materials, 2017, v. 9, p. 353. https://doi.org/10.1038/am.2017.8 Sante D. Di., Barone P., Bertacco R., Picozzi S. Electric control of the giant rashba effect in bulk GeTe. 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Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases

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