过量钒掺杂对SiC晶体生长的负面影响

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS) Pub Date : 2021-12-06 DOI:10.1109/SSLChinaIFWS54608.2021.9675239

F. Fu, Shujun Deng, Liang Wang, Hongjian Liao, J Zhang

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引用次数: 0

摘要

研究了重钒掺杂对SiC单晶生长的影响。在DIC显微镜下，在生长表面发现了金字塔状和立方状的钒析出物。进一步的AFM和SEM观察表明，由于钒析出相的堵塞，原有的平行生长阶梯发生了扭曲，形成了以钒析出相为顶点的三角形阶梯状流动。二次离子能谱分析结果表明，钒的掺杂量接近其在SiC中的饱和溶解度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The negative impact of excessive vanadium doping for SiC crystal growth

The effect of heavy vanadium doping on the growth of SiC single crystal was investigated. Pyramidal and cubic vanadium precipitates were discovered on the as-grown surface by DIC microscope. Further observation by AFM and SEM shows that the original parallel growth steps are twisted due to the blockage of vanadium precipitates, forming a triangular stepped flow with vanadium precipitates as the vertex. The results of secondary ion energy spectroscopy show that the doping amount of vanadium is close to its saturated solubility in SiC.

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来源期刊

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)

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