J. Verma, Prem Kumar Kandaswamy, V. Protasenko, A. Verma, H. Xing, D. Jena
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In this work, the authors report on electroluminescence from 8 period self-assembled GaN QDs embedded in AIN barriers grown by plasma assisted molecular beam epitaxy (PAMBE), in SK growth mode, on commercially available AlN/sapphire templates.
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