精确电子漂移速度建模对GaN-on-Si hemt电学特性的影响

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870417

K. Reiser, J. Twynam, C. Eckl, H. Brech, R. Weigel

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引用次数: 1

摘要

讨论了精确的电子速度场关系模型对GaN-on-Si hemt中脉冲IV和小信号RF特性的影响，并与测量结果进行了比较。我们通过计算机辅助设计(TCAD)模拟和测量表明，不仅低场流度和饱和速度非常重要，而且两者之间的过渡行为也必须精确建模。实验上，我们利用器件模拟和超短脉冲测量数据提取速度场关系。据我们所知，这是对GaN-on-Si器件中速度场关系的首次研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of Accurate Electron Drift Velocity Modelling on the Electrical Characteristics in GaN-on-Si HEMTs

The influence of an accurate electron velocity-field relationship modelling on pulsed IV and small-signal RF characteristics in GaN-on-Si HEMTs is discussed and compared to measurements. We show by technology computer-aided design (TCAD) simulation and measurements that not only the lowfield mobility and saturation velocity are of great importance, but also the transition behaviour in between has to be modelled accurately. Experimentally, we extract the velocity-field relationship using device simulation and measured data with ultra short pulse lengths. To the best of our knowledge, this is the first study on the velocity-field relationship in GaN-on-Si devices.

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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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