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基于协方差-矩阵-自适应进化策略的极紫外光刻掩模缺陷补偿优化(订正)

IF 1.5 2区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Micro/Nanolithography, MEMS, and MOEMS Pub Date : 2019-02-27 DOI:10.1117/1.jmm.18.1.019801
Heng Zhang, Sikun Li, Xiang-zhao Wang, Chaoxing Yang, Wei Cheng
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引用次数: 5

摘要

摘要这份勘误表纠正了原文中的错误。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Optimization of defect compensation for extreme ultraviolet lithography mask by covariance-matrix-adaption evolution strategy (Erratum)
Abstract. This erratum corrects mistakes in the original paper.
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来源期刊
Journal of Micro/Nanolithography, MEMS, and MOEMS
Journal of Micro/Nanolithography, MEMS, and MOEMS Multiple-
CiteScore
3.40
自引率
30.40%
发文量
0
审稿时长
6-12 weeks
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