GaN PMIC机遇:在650V GaN-on- si平台上模拟和数字构建块的表征

W. L. Jiang, M. S. Zaman, S. Murray, H. De Vleeschouwer, J. Roig, P. Moens, O. Trescases
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引用次数: 3

摘要

本文报道了基于GaN的单片集成构建模块的性能。在650 v的GaN-on-Si工艺中制作了集成栅极驱动器、低压模拟和同步数字电路并进行了测量。校准GaN模型与模拟硅设计进行比较,以确定最佳集成标准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
GaN PMIC Opportunities: Characterization of Analog and Digital Building Blocks in a 650V GaN-on-Si Platform
This paper reports the performance of GaN -based building blocks for monolithic integration. An integrated gate driver, low-voltage analog and synchronous digital circuits are fabricated in a 650-V GaN-on-Si process and measured. Calibrated GaN models are compared against simulated silicon designs to identify optimal integration criteria.
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