W. L. Jiang, M. S. Zaman, S. Murray, H. De Vleeschouwer, J. Roig, P. Moens, O. Trescases
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GaN PMIC Opportunities: Characterization of Analog and Digital Building Blocks in a 650V GaN-on-Si Platform
This paper reports the performance of GaN -based building blocks for monolithic integration. An integrated gate driver, low-voltage analog and synchronous digital circuits are fabricated in a 650-V GaN-on-Si process and measured. Calibrated GaN models are compared against simulated silicon designs to identify optimal integration criteria.