{"title":"超薄连续金属薄膜的原子层沉积","authors":"S. George","doi":"10.1109/IITC.2014.6831898","DOIUrl":null,"url":null,"abstract":"The atomic layer deposition (ALD) of ultrathin and continuous metal films is very challenging. This paper describes a general procedure that can yield an ultrathin and continuous metal ALD film using a W ALD adhesion layer.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"17 1","pages":"325-326"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atomic layer deposition of ultrathin and continuous metal films\",\"authors\":\"S. George\",\"doi\":\"10.1109/IITC.2014.6831898\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The atomic layer deposition (ALD) of ultrathin and continuous metal films is very challenging. This paper describes a general procedure that can yield an ultrathin and continuous metal ALD film using a W ALD adhesion layer.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":\"17 1\",\"pages\":\"325-326\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2014.6831898\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2014.6831898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Atomic layer deposition of ultrathin and continuous metal films
The atomic layer deposition (ALD) of ultrathin and continuous metal films is very challenging. This paper describes a general procedure that can yield an ultrathin and continuous metal ALD film using a W ALD adhesion layer.