基于自对准触点(SAC)和主动栅极触点(COAG)的高尺度CMOS技术改进空气间隔器

2020 IEEE Symposium on VLSI Technology Pub Date : 2020-06-01 DOI:10.1109/VLSITechnology18217.2020.9265096

K. Cheng, Chanro Park, Heng Wu, Juntao Li, S. Nguyen, Jingyun Zhang, Miaomiao Wang, S. Mehta, Zuoguang Liu, R. Conti, N. Loubet, J. Frougier, A. Greene, T. Yamashita, B. Haran, R. Divakaruni

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引用次数: 5

摘要

我们报道了一种改进的空气间隔器，它成功地协集成在具有自对准触点(SAC)和有源栅极触点(COAG)的FinFET晶体管上。新的集成方案使空气间隔层的形成与底层晶体管架构无关，从而为在FinFET和栅极全能(GAA)技术中无缝采用空气间隔层铺平了道路。实验证明，有效电容$(C_{\ mathm {eff}})$降低了15%。新型空气间隔器所实现的功率/性能优势超过了将FinFET从7nm节点缩放到5nm节点的优势。

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Improved Air Spacer Co-Integrated with Self-Aligned Contact (SAC) and Contact Over Active Gate (COAG) for Highly Scaled CMOS Technology

We report an improved air spacer that is successfully co-integrated on FinFET transistors with Self-Aligned Contacts (SAC) and Contacts Over Active Gate (COAG). The new integration scheme enables air spacer formation agnostic to the underlying transistor architecture, thus paving the way for a seamless adoption of air spacer in FinFET and Gate-All-Around (GAA) technologies. A reduction in effective capacitance $(C_{\mathrm{eff}})$ by 15% is experimentally demonstrated. The power/performance benefits achieved by the new air spacer exceeds the benefits of scaling FinFET from 7nm node to 5nm node.

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2020 IEEE Symposium on VLSI Technology

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