NO分子在As6/Sb6和Sb6/Bi6横向异质结构上吸附的第一性原理研究

Dan Yang, D. Fang, Dengkui Wang, Jinhua Li, Yingjiao Zhai, X. Chu, Dandan Wang, Xiao-hua Wang, Haoxia Yan, X. Fang
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引用次数: 0

摘要

预测和设计高气敏半导体对于解决日益严重的环境问题至关重要。本文构建了As6/Sb6 AC‐/ZZ‐lhs和Sb6/Bi6 AC‐/ZZ‐lhs四种横向异质结构(lhs)。利用第一性原理计算研究了NO分子在这些lhs上的吸附。结果表明,NO分子在As6/Sb6 LHS上以扶手椅(AC)界面吸附为物理吸附,而在As6/Sb6 LHS上以之形(ZZ)界面和Sb6/Bi6 AC‐/ZZ‐LHS上以化学吸附的方式吸附,吸附能强,电荷转移量大。所有lhs都充当NO分子的电荷供体。同时,NO分子的吸附使As6/Sb6 ZZ‐LHS和Sb6/Bi6 AC‐/ZZ‐LHS的电子性能发生了显著变化,表明这两种LHS在NO气体传感器中具有很大的应用潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First‐Principles Investigation of NO Molecule Adsorption on As6/Sb6 and Sb6/Bi6 Lateral Heterostructures
Predicting and designing highly gas‐sensitive semiconductors is crucial for solving growing environmental problems. Herein, four lateral heterostructures (LHSs), As6/Sb6 AC‐/ZZ‐LHSs and Sb6/Bi6 AC‐/ZZ‐LHSs, are constructed. The adsorption of NO molecule on these LHSs is investigated using first‐principle calculations. The results indicate that the adsorption of NO molecule on As6/Sb6 LHS with armchair (AC) interface is physisorption, whereas NO molecule is chemically adsorbed on As6/Sb6 LHS with zigzag (ZZ) interface and Sb6/Bi6 AC‐/ZZ‐LHSs, with strong adsorption energy and large charge transfer. All LHSs act as charge donors for the NO molecule. Meanwhile, the adsorption of NO molecule causes a significant change in the electronic properties of As6/Sb6 ZZ‐LHS and Sb6/Bi6 AC‐/ZZ‐LHSs, which shows that these LHSs have great potential for application in NO gas sensors.
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