硅纳米通道中施主态深化的从头算分析

2012 IEEE Silicon Nanoelectronics Workshop (SNW) Pub Date : 2012-06-10 DOI:10.1109/SNW.2012.6243298

D. Moraru, Y. Kuzuya, E. Hamid, T. Mizuno, M. Tabe, H. Mizuta

{"title":"硅纳米通道中施主态深化的从头算分析","authors":"D. Moraru, Y. Kuzuya, E. Hamid, T. Mizuno, M. Tabe, H. Mizuta","doi":"10.1109/SNW.2012.6243298","DOIUrl":null,"url":null,"abstract":"We analyzed by ab initio atomistic simulations the energy spectrum of individual donors in Si nanostructures and found significantly enhanced ionization energy (~ 1 eV). By correlating these findings to experimental measurements of doped nanoscale SOI-FETs, design rules can be clarified for tunneling operation of single-dopant devices towards room temperature.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ab initio analysis of donor state deepening in Si nano-channels\",\"authors\":\"D. Moraru, Y. Kuzuya, E. Hamid, T. Mizuno, M. Tabe, H. Mizuta\",\"doi\":\"10.1109/SNW.2012.6243298\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We analyzed by ab initio atomistic simulations the energy spectrum of individual donors in Si nanostructures and found significantly enhanced ionization energy (~ 1 eV). By correlating these findings to experimental measurements of doped nanoscale SOI-FETs, design rules can be clarified for tunneling operation of single-dopant devices towards room temperature.\",\"PeriodicalId\":6402,\"journal\":{\"name\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2012.6243298\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243298","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们通过从头算原子模拟分析了硅纳米结构中单个供体的能谱，发现电离能显著增强(~ 1 eV)。通过将这些发现与掺杂纳米soi - fet的实验测量相关联，可以明确单掺杂器件在室温下隧穿操作的设计规则。

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Ab initio analysis of donor state deepening in Si nano-channels

We analyzed by ab initio atomistic simulations the energy spectrum of individual donors in Si nanostructures and found significantly enhanced ionization energy (~ 1 eV). By correlating these findings to experimental measurements of doped nanoscale SOI-FETs, design rules can be clarified for tunneling operation of single-dopant devices towards room temperature.

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2012 IEEE Silicon Nanoelectronics Workshop (SNW)

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