高通量离子注入器,用于III-V化合物半导体的环保产品

Takeshi Matsumoto, Masatoshi Onoda, Kohichi Orihira, J. Tatemichi, E. Guiot, Olivier Petit, Thibaut Courrenq
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引用次数: 1

摘要

我们开发了一种用于高通量晶圆加工的超高电流离子注入系统。离子源是基于平板显示行业中使用的植入器设计的,可以产生80厘米高、超过80毫安的光束。用大尺寸的光束一次加工多个晶圆。植入工具在1E16和1E17离子/cm2下的吞吐量分别为107和38片/小时。使用Smart Cut™技术成功地实现了表面光滑的InP层转移。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High throughput ion implanter for environmentally beneficial products with III–V compound semiconductor
We have developed an ultra-high current ion implantation system for high throughput wafer processing. The ion source is designed based on implanters used in the flat panel display industry to produce 80 cm high beams which exceed 80 mA. Multiple wafers are processed at a time with the large-sized beam. The implantation tool exhibited throughput of 107 and 38 wafers per hour for 1E16 and 1E17 ions/cm2, respectively. Successful InP layer transfer with smooth surface was demonstrated using Smart Cut™ technology.
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