{"title":"可编程金属化单元(PMC) HSPICE宏模型及其在存储器设计中的应用","authors":"P. Junsangsri, F. Lombardi, Jie Han","doi":"10.1145/2770287.2770299","DOIUrl":null,"url":null,"abstract":"This paper presents a new HSPICE macromodel of a Programmable Metallization Cell (PMC). The electrical characteristics of a PMC are simulated by using a geometric model that considers the vertical and lateral growth/dissolution of the metallic filament. The selection of the parameters is based on operational features, so the electrical characterization of the PMC is simple, easy to simulate and intuitive. The I-V and R-V plots of a PMC are generated at a very small error compared with experimental data; the proposed model also shows a small error for the relationship between the switching time and the pulse amplitude. The use of a PMC as resistive element in a crossbar memory is also presented; it is shown that a PMC-based crossbar offers substantial improvements over other resistive technologies.","PeriodicalId":6519,"journal":{"name":"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","volume":"37 1","pages":"45-50"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"HSPICE macromodel of a Programmable Metallization Cell (PMC) and its application to memory design\",\"authors\":\"P. Junsangsri, F. Lombardi, Jie Han\",\"doi\":\"10.1145/2770287.2770299\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new HSPICE macromodel of a Programmable Metallization Cell (PMC). The electrical characteristics of a PMC are simulated by using a geometric model that considers the vertical and lateral growth/dissolution of the metallic filament. The selection of the parameters is based on operational features, so the electrical characterization of the PMC is simple, easy to simulate and intuitive. The I-V and R-V plots of a PMC are generated at a very small error compared with experimental data; the proposed model also shows a small error for the relationship between the switching time and the pulse amplitude. The use of a PMC as resistive element in a crossbar memory is also presented; it is shown that a PMC-based crossbar offers substantial improvements over other resistive technologies.\",\"PeriodicalId\":6519,\"journal\":{\"name\":\"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)\",\"volume\":\"37 1\",\"pages\":\"45-50\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/2770287.2770299\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2770287.2770299","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
HSPICE macromodel of a Programmable Metallization Cell (PMC) and its application to memory design
This paper presents a new HSPICE macromodel of a Programmable Metallization Cell (PMC). The electrical characteristics of a PMC are simulated by using a geometric model that considers the vertical and lateral growth/dissolution of the metallic filament. The selection of the parameters is based on operational features, so the electrical characterization of the PMC is simple, easy to simulate and intuitive. The I-V and R-V plots of a PMC are generated at a very small error compared with experimental data; the proposed model also shows a small error for the relationship between the switching time and the pulse amplitude. The use of a PMC as resistive element in a crossbar memory is also presented; it is shown that a PMC-based crossbar offers substantial improvements over other resistive technologies.