三自对准平面双栅mosfet:器件和电路

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979527

K. Guarini, Paul M. Solomon, Yuan Zhang, Kevin K. Chan, E. C. Jones, Guy M. Cohen, A. Krasnoperova, M. Ronay, O. Dokumaci, J. J. Bucchignano, Cyril Cabral, Christian Lavoie, Victor Ku, Diane C. Boyd, K. Petrarca, I. V. Babich, J. Treichler, P. Kozlowski, J. Newbury, C. D'Emic, R. M. Sicina, Hon-Sum Philip Wong

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引用次数: 68

摘要

我们介绍了一种平面三自对准双栅极场效应管结构(“PAGODA”)。器件制造包括晶圆键合，前端CMP，混合光学/电子束光刻，硅化硅源/漏侧壁，以及后门凹边和钝化。我们演示了双栅极FET的工作，在两个接口，逆变器动作和NOR逻辑上都具有良好的传输。

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Triple-self-aligned, planar double-gate MOSFETs: devices and circuits

We introduce a planar, triple-self-aligned double-gate FET structure ("PAGODA"). Device fabrication incorporates wafer bonding, front-end CMP, mixed optical/e-beam lithography, silicided silicon source/drain sidewalls, and back gate undercut and passivation. We demonstrate double-gate FET operation with good transport at both interfaces, inverter action, and NOR logic.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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