International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) - 最新文献

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics

Pub Date : 2001-12-02 DOI: 10.1109/IEDM.2001.979400 J. Hergenrother, G. Wilk, T. Nigam, F. Klemens, D. Monroe, P. Silverman, T. Sorsch, B. Busch, M. Green, M. R. Baker, T. Boone, M. Bude, N. A. Ciampa, E. Ferry, A. Fiory, S. Hillenius, D. Jacobson, R.W. Johnson, P. Kalavade, R. Keller, C. King, A. Kornblit, H. Krautter, J.T.-C. Lee, W. Mansfield, J. Miner, M. Morris, S. Oh, J. Rosamilia, B. Sapjeta, K. Short, K. Steiner, D. Muller, P. Voyles, J. Grazul, E. Shero, M. Givens, C. Pomarede, M. Mazanec, C. Werkhoven

Monte Carlo impurity diffusion simulation considering charged species for low thermal budget sub-50 nm CMOS process modeling

Pub Date : 2001-12-02 DOI: 10.1007/978-3-7091-6244-6_3 M. Hane, T. Ikezawa, K. Takeuchi, G. Gilmer

Suppression of drain conductance dispersion in InP-based HEMTs for broadband optical communication systems

Pub Date : 2001-12-02 DOI: 10.1109/IEDM.2001.979463 N. Okamoto, T. Takahashi, K. Imanishi, K. Sawada, N. Hara

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