Understanding field scattering in AlGaN/GaN heterostructure field-effect transistors

are devices that vary the flow of electrical current between a ‘source’ and a ‘drain’ electrode. This flow is controlled using a semiconductor: a material which can act as either a conductor or an insulator, depending on the strength of the electrical field passing across it. By fine-tuning this field, also known as the ‘gate voltage’, users can alter the semiconductor’s conductivity, in turn, varying the flow of the current between the source and drain electrodes, which are placed on top of the semiconductor.