新开发的铜电化学抛光替代CMP工艺，适用于易碎低k电介质中镶嵌的大马士革铜

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979413

S. Sato, Z. Yasuda, M. Ishihara, N. Komai, H. Ohtorii, A. Yoshio, Y. Segawa, H. Horikoshi, Y. Ohoka, K. Tai, S. Takahashi, T. Nogami

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引用次数: 7

摘要

提出了一种新的除铜工艺原理——电化学抛光法(ECP)。ECP利用铜的电化学溶解，其去除率由施加的电流决定，高于8000 A/min，而“平面化”是通过在比CMP低10倍的擦拭压力下擦拭铜配合物来形成无侵蚀和无划痕的damascene铜互连。ECP是一种很有前途的CMP替代品，适用于易碎低k材料中的铜镶嵌。

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Newly developed electro-chemical polishing process of copper as replacement of CMP suitable for damascene copper inlaid in fragile low-k dielectrics

A new principle for the copper removal process, Electro-Chemical-Polishing (ECP), to replace CMP is demonstrated. ECP which leverages electrochemical dissolution of copper has removal rates determined by the imposed current, higher than 8000 A/min, while "planarization" is made by wiping out copper complexes at a wiping pressure ten times lower than that for CMP to form erosion- and scratch-free damascene copper interconnects. ECP is a promising replacement for CMP suitable for copper inlaid in fragile low-k materials.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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