J. Campbell, K. Cheung, S. Drozdov, R. Southwick, J. Ryan, A. Oates, J. Suehle
{"title":"通道长度相关的串联电阻?","authors":"J. Campbell, K. Cheung, S. Drozdov, R. Southwick, J. Ryan, A. Oates, J. Suehle","doi":"10.1109/SNW.2012.6243299","DOIUrl":null,"url":null,"abstract":"A recently developed series resistance (R<sub>SD</sub>) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent R<sub>SD</sub> which is observed across a wide range of channel lengths and across many different technologies (SiO<sub>2</sub>, SiON, and high-k) (see Figs. 1a-f). This observation obviously raises some concerning issues and implications as R<sub>SD</sub> is universally accepted as channel length-independent. However, careful examination of the R<sub>SD</sub> extraction procedure as well as comparison between R<sub>SD</sub>-corrected field effect mobility (u<sub>FE</sub>) and geometric magnetoresistance mobility (u<sub>MR</sub>) suggests that this unexpected observation may be valid.","PeriodicalId":6402,"journal":{"name":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Channel length-dependent series resistance?\",\"authors\":\"J. Campbell, K. Cheung, S. Drozdov, R. Southwick, J. Ryan, A. Oates, J. Suehle\",\"doi\":\"10.1109/SNW.2012.6243299\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A recently developed series resistance (R<sub>SD</sub>) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent R<sub>SD</sub> which is observed across a wide range of channel lengths and across many different technologies (SiO<sub>2</sub>, SiON, and high-k) (see Figs. 1a-f). This observation obviously raises some concerning issues and implications as R<sub>SD</sub> is universally accepted as channel length-independent. However, careful examination of the R<sub>SD</sub> extraction procedure as well as comparison between R<sub>SD</sub>-corrected field effect mobility (u<sub>FE</sub>) and geometric magnetoresistance mobility (u<sub>MR</sub>) suggests that this unexpected observation may be valid.\",\"PeriodicalId\":6402,\"journal\":{\"name\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2012.6243299\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2012.6243299","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range of channel lengths and across many different technologies (SiO2, SiON, and high-k) (see Figs. 1a-f). This observation obviously raises some concerning issues and implications as RSD is universally accepted as channel length-independent. However, careful examination of the RSD extraction procedure as well as comparison between RSD-corrected field effect mobility (uFE) and geometric magnetoresistance mobility (uMR) suggests that this unexpected observation may be valid.
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