在热平衡模式下快速热处理硅化镍的形成

V. Pilipenko, J. Solovjov, P. Gaiduk
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引用次数: 0

摘要

采用卢瑟福后向散射法、x射线衍射、透射电镜和电物理测量等方法研究了(111)-Si衬底在热平衡模式下快速退火过程中硅化镍层的形成。采用磁控溅射法制备了厚度约70 nm的镍薄膜。在热平衡模式下,用石英卤素灯的非相干光通量在氮气介质中照射衬底背面7秒,温度范围为200 ~ 550°C。镍和硅原子重新分配到单硅化物NiSi组成已经在300°С开始,几乎在400°С结束。在相同的温度范围内,形成平均晶粒尺寸为0.05 ~ 0.1 μm的正交晶相。在300℃的快速热处理温度下,形成了两相硅化物(ni2si和NiSi),同时在表面保留了一层薄薄的未反应的Ni。这一事实可以用初始退火阶段的高升温速率来解释,在此阶段,NiSi相形成的温度条件早于整个Ni层转变为Ni2 Si相。具有三个相同时存在的层的特征是硅-硅界面的高粗糙度。在200 ~ 250℃的快速热处理温度范围内,硅化镍层的比电阻率的依赖性增大到26 ~ 30 μOhm·cm,在400℃的快速热处理温度范围内,比电阻率的依赖性减小到15 μOhm·cm左右。这个比电阻率值是NiSi相高导电性的特征,并且与结构研究的结果有很好的相关性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nickel silicide formation with rapid thermal treatment in the heat balance mode
The formation of nickel silicide layers on (111)-Si substrates during rapid thermal annealing in the heat balance mode was studied by the Rutherford backscattering method, X-ray diffraction, transmission electron microscopy, and electrophysical measurements. Nickel films of about 70 nm thickness were deposited by magnetron sputtering at room temperature. The rapid thermal treatment was carried out in a heat balance mode by irradiating the substrates backside with a non-coherent light flux of quartz halogen lamps in the nitrogen medium for 7 seconds up to the temperature range of 200 to 550 °C. The redistribution of nickel and silicon atoms to monosilicide NiSi composition starts already at a temperature of 300 °С and almost ends at a temperature of 400 °С. In the same temperature range, the orthorhombic NiSi phase with an average grain size of about 0.05–0.1 μm is formed. At a rapid thermal treatment temperature of 300 °C, two phases of silicides (Ni2 Si and NiSi) are formed, while a thin layer of unreacted Ni is retained on the surface. This fact can be explained by the high heating rate at the initial annealing stage, at which the temperature conditions of the NiSi phase formation occur earlier than the entire Ni layer manages to turn into the Ni2 Si phase. The layers with a simultaneous presence of three phases are characterized by a high roughness of the silicide-silicon interface. The dependence of the specific resistivity of nickel silicide layers shows an increase to the values of 26–30 μOhm · cm in the range of rapid thermal treatment temperatures of 200–250 °C and a subsequent decrease to the values of about 15 μOhm · cm at a rapid thermal treatment temperature of 400 °C. This value of specific resistivity is characteristic of the high conductivity of the NiSi phase and correlates well with the results of structure studies.
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