非易失性记忆的研究

D. Kumar
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引用次数: 1

摘要

本文介绍了即将到来的非易失性存储器(NVM)概述。非易失性存储器器件是电可编程和可擦除的,用于在器件内的某个位置存储电荷,并在断开来自器件的电压供应时保留该电荷。非易失性存储器通常是一种半导体存储器,包括在衬底上配置的数千个单独的晶体管,以形成存储单元的行和列矩阵。非易失性存储器在数字计算设备中用于存储数据。在本文中,我们给出了介绍,包括对即将到来的NVM的简要调查,如FeRAM, MRAM, CBRAM, PRAM, SONOS, RRAM,赛道内存和NRAM。在将来,非易失性存储器可以消除对包括硬盘在内的相对较慢形式的辅助存储系统的需要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Study about Non-Volatile Memories
This paper presents an upcoming nonvolatile memories (NVM) overview. Non-volatile memory devices are electrically programmable and erasable to store charge in a location within the device and to retain that charge when voltage supply from the device is disconnected. The non-volatile memory is typically a semiconductor memory comprising thousands of individual transistors configured on a substrate to form a matrix of rows and columns of memory cells. Non-volatile memories are used in digital computing devices for the storage of data. In this paper we have given introduction including a brief survey on upcoming NVM's such as FeRAM, MRAM, CBRAM, PRAM, SONOS, RRAM, Racetrack memory and NRAM. In future Non-volatile memory may eliminate the need for comparatively slow forms of secondary storage systems, which include hard disks.
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