天线封装用低温固化低Dk & Df聚酰亚胺

Hitoshi Araki, Akira Shimada, Hisashi Ogasawara, Masaya Jukei, T. Fujiwara, Masao Tomikawa
{"title":"天线封装用低温固化低Dk & Df聚酰亚胺","authors":"Hitoshi Araki, Akira Shimada, Hisashi Ogasawara, Masaya Jukei, T. Fujiwara, Masao Tomikawa","doi":"10.4071/1085-8024-2021.1.000130","DOIUrl":null,"url":null,"abstract":"\n In this paper, we developed novel low temperature curable (around 200~250 °C) low Dk (2.7) & Df (0.002) polyimide with high glass transition temperature (170 °C) and elongation (100%). We also developed negative tone photosensitive polyimide with low Dk (3.0) & Df (0.007) by photo initiator and cross linker. Material types of them are liquid or B-stage sheet materials. Patterning methods of the non-photosensitive polyimides were imprint and UV laser ablation. Resolution of those process were 10um via and 30um via respectively. Photosensitive polyimide was patterned by photolithographic tool. We fabricated fine patterned polyimide of photosensitive polyimide by photolithography. We investigated the frequency dependence of the novel low Dk & Df polyimide up to 95 GHz, and confirmed that Df gradually increased from 0.002 to 0.005 as the frequency increased. To confirm effect of the novel polyimide, insertion loss of micro-strip line whose length was 10 mm were measured using the new developed polyimide. Insertion loss (S21 parameter) of the novel polyimide was 0.8 and that was less than half of conventional polyimide. RDL structure was fabricated by novel low Dk and Df polyimide and we tested bump shear strength after thermal cycle test. All shear mode were ductile solder failure without polyimide delamination. Because our novel polyimides show excellent dielectric, thermal and mechanical properties, they are suitable to insulator of RDL for FO-AiP.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"35 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low Temperature Curable Low Dk & Df Polyimide for Antenna in Package\",\"authors\":\"Hitoshi Araki, Akira Shimada, Hisashi Ogasawara, Masaya Jukei, T. Fujiwara, Masao Tomikawa\",\"doi\":\"10.4071/1085-8024-2021.1.000130\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n In this paper, we developed novel low temperature curable (around 200~250 °C) low Dk (2.7) & Df (0.002) polyimide with high glass transition temperature (170 °C) and elongation (100%). We also developed negative tone photosensitive polyimide with low Dk (3.0) & Df (0.007) by photo initiator and cross linker. Material types of them are liquid or B-stage sheet materials. Patterning methods of the non-photosensitive polyimides were imprint and UV laser ablation. Resolution of those process were 10um via and 30um via respectively. Photosensitive polyimide was patterned by photolithographic tool. We fabricated fine patterned polyimide of photosensitive polyimide by photolithography. We investigated the frequency dependence of the novel low Dk & Df polyimide up to 95 GHz, and confirmed that Df gradually increased from 0.002 to 0.005 as the frequency increased. To confirm effect of the novel polyimide, insertion loss of micro-strip line whose length was 10 mm were measured using the new developed polyimide. Insertion loss (S21 parameter) of the novel polyimide was 0.8 and that was less than half of conventional polyimide. RDL structure was fabricated by novel low Dk and Df polyimide and we tested bump shear strength after thermal cycle test. All shear mode were ductile solder failure without polyimide delamination. Because our novel polyimides show excellent dielectric, thermal and mechanical properties, they are suitable to insulator of RDL for FO-AiP.\",\"PeriodicalId\":14363,\"journal\":{\"name\":\"International Symposium on Microelectronics\",\"volume\":\"35 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Symposium on Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.4071/1085-8024-2021.1.000130\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4071/1085-8024-2021.1.000130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

在本文中,我们开发了一种新型的低温固化(约200~250°C)低Dk(2.7)和Df(0.002)聚酰亚胺,具有高玻璃化温度(170°C)和高伸长率(100%)。用光引发剂和交联剂制备了低Dk(3.0)和Df(0.007)的负色调光敏聚酰亚胺。它们的材料类型为液体或b级片材。非光敏聚酰亚胺的制版方法有压印和紫外激光烧蚀。两种工艺的分辨率分别为10um通孔和30um通孔。用光刻工具对光敏聚酰亚胺进行图案化。采用光刻法制备了光敏聚酰亚胺的精细图案聚酰亚胺。我们研究了新型低Dk & Df聚酰亚胺在95 GHz以下的频率依赖性,并证实Df随频率的增加从0.002逐渐增加到0.005。为了验证新型聚酰亚胺的效果,用新型聚酰亚胺测量了长度为10 mm的微带线的插入损耗。新型聚酰亚胺的插入损失(S21参数)为0.8,小于传统聚酰亚胺的一半。采用新型低Dk和Df聚酰亚胺制备了RDL结构,并通过热循环试验测试了碰撞剪切强度。所有剪切模式均为延展性焊料失效,无聚酰亚胺分层。由于我们的新型聚酰亚胺具有优异的介电性能、热学性能和力学性能,适合用作FO-AiP的RDL绝缘体。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low Temperature Curable Low Dk & Df Polyimide for Antenna in Package
In this paper, we developed novel low temperature curable (around 200~250 °C) low Dk (2.7) & Df (0.002) polyimide with high glass transition temperature (170 °C) and elongation (100%). We also developed negative tone photosensitive polyimide with low Dk (3.0) & Df (0.007) by photo initiator and cross linker. Material types of them are liquid or B-stage sheet materials. Patterning methods of the non-photosensitive polyimides were imprint and UV laser ablation. Resolution of those process were 10um via and 30um via respectively. Photosensitive polyimide was patterned by photolithographic tool. We fabricated fine patterned polyimide of photosensitive polyimide by photolithography. We investigated the frequency dependence of the novel low Dk & Df polyimide up to 95 GHz, and confirmed that Df gradually increased from 0.002 to 0.005 as the frequency increased. To confirm effect of the novel polyimide, insertion loss of micro-strip line whose length was 10 mm were measured using the new developed polyimide. Insertion loss (S21 parameter) of the novel polyimide was 0.8 and that was less than half of conventional polyimide. RDL structure was fabricated by novel low Dk and Df polyimide and we tested bump shear strength after thermal cycle test. All shear mode were ductile solder failure without polyimide delamination. Because our novel polyimides show excellent dielectric, thermal and mechanical properties, they are suitable to insulator of RDL for FO-AiP.
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