21世纪的记忆何去何从?(存储技术的演变与革命)

C. Hwang
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引用次数: 3

摘要

在新的千禧年,随着当前技术的不断革命性发展,存储领域将出现几种“第三”维方法,以满足各种客户的需求。与此同时,微加工技术、多芯片堆叠技术、数模混合电路、片上合并存储器、克隆与遗传学、生物化学、磁学等多种进化技术和组合技术正在等待突破,并将更加紧密地向高密度、高速、低功耗的通用存储器目标迈进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Where does memory go in the 21C? (Evolution and revolution of memory technology)
For the new millennium, several "third" dimensional approaches in the memory area will take place with continuous revolutionary development from current technologies for various customers' demands. In the mean time, various and combined evolutionary technologies such as micro-machining technology, multi-chip stacking techniques, mixed digital/analog circuits, merged memories on a chip, cloning and genetics, biochemistry and magnetics areas are awaiting a breakthrough and will be pursued toward the generic memory goals of high density, high speed and low power more closely.
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