Jie Deng, U. Roh, Jerry Bao, Youseok Suh, Jihong Choi, Ying Chen, Vicki Lin, Jason Cheng, Zhimin Song, M. Cai, L. Ge, Gary Chen, Leo Kim, Hao Wang, S. Song, Deepak Kumar Sharma, Xiao yong Wang, Byungmoo Song, Y. Y. Masuoka, Kwon Lee, Sungwon Kim, Jinkyu Lee, Hyejun Jin, Venu Boynapalli, Rajagopal Narayanan, P. Pénzes, G. Nallapati, C. Chidambaram
{"title":"5G和AI集成高性能移动SoC工艺设计与7nm EUV FinFET技术共同开发和生产","authors":"Jie Deng, U. Roh, Jerry Bao, Youseok Suh, Jihong Choi, Ying Chen, Vicki Lin, Jason Cheng, Zhimin Song, M. Cai, L. Ge, Gary Chen, Leo Kim, Hao Wang, S. Song, Deepak Kumar Sharma, Xiao yong Wang, Byungmoo Song, Y. Y. Masuoka, Kwon Lee, Sungwon Kim, Jinkyu Lee, Hyejun Jin, Venu Boynapalli, Rajagopal Narayanan, P. Pénzes, G. Nallapati, C. Chidambaram","doi":"10.1109/VLSITechnology18217.2020.9265074","DOIUrl":null,"url":null,"abstract":"We report on Qualcomm® Snapdragon™ 765 mobile Platform and world's first integrated 5G platform supporting both mmWave and sub-6 using industry-leading 7nm EUV FinFET technology. Snapdragon 765 unites 5G and AI to power select premium-tier experiences on a global scale. Snapdragon 765 exhibits 20% improvement in performance and 35% lower power consumption over its predecessor Snapdragon 730 (8nm FinFET) thanks to device performance boost with new technology integration feature (MDB), power-perf efficient design architecture enabled by dual poly pitch process, and low voltage logic/memory operation through process-design co-development. Further process-design co-optimization reduces CPU Vmin by 80mV, enabling premium-tier performance experience with integrated 5G and AI mobile SOC platform.","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"1 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"5G and AI Integrated High Performance Mobile SoC Process-Design Co-Development and Production with 7nm EUV FinFET Technology\",\"authors\":\"Jie Deng, U. Roh, Jerry Bao, Youseok Suh, Jihong Choi, Ying Chen, Vicki Lin, Jason Cheng, Zhimin Song, M. Cai, L. Ge, Gary Chen, Leo Kim, Hao Wang, S. Song, Deepak Kumar Sharma, Xiao yong Wang, Byungmoo Song, Y. Y. Masuoka, Kwon Lee, Sungwon Kim, Jinkyu Lee, Hyejun Jin, Venu Boynapalli, Rajagopal Narayanan, P. Pénzes, G. Nallapati, C. Chidambaram\",\"doi\":\"10.1109/VLSITechnology18217.2020.9265074\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on Qualcomm® Snapdragon™ 765 mobile Platform and world's first integrated 5G platform supporting both mmWave and sub-6 using industry-leading 7nm EUV FinFET technology. Snapdragon 765 unites 5G and AI to power select premium-tier experiences on a global scale. Snapdragon 765 exhibits 20% improvement in performance and 35% lower power consumption over its predecessor Snapdragon 730 (8nm FinFET) thanks to device performance boost with new technology integration feature (MDB), power-perf efficient design architecture enabled by dual poly pitch process, and low voltage logic/memory operation through process-design co-development. Further process-design co-optimization reduces CPU Vmin by 80mV, enabling premium-tier performance experience with integrated 5G and AI mobile SOC platform.\",\"PeriodicalId\":6850,\"journal\":{\"name\":\"2020 IEEE Symposium on VLSI Technology\",\"volume\":\"1 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSITechnology18217.2020.9265074\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSITechnology18217.2020.9265074","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
5G and AI Integrated High Performance Mobile SoC Process-Design Co-Development and Production with 7nm EUV FinFET Technology
We report on Qualcomm® Snapdragon™ 765 mobile Platform and world's first integrated 5G platform supporting both mmWave and sub-6 using industry-leading 7nm EUV FinFET technology. Snapdragon 765 unites 5G and AI to power select premium-tier experiences on a global scale. Snapdragon 765 exhibits 20% improvement in performance and 35% lower power consumption over its predecessor Snapdragon 730 (8nm FinFET) thanks to device performance boost with new technology integration feature (MDB), power-perf efficient design architecture enabled by dual poly pitch process, and low voltage logic/memory operation through process-design co-development. Further process-design co-optimization reduces CPU Vmin by 80mV, enabling premium-tier performance experience with integrated 5G and AI mobile SOC platform.
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