热热解石墨在电力电子模块中的热解耦

Riya Paul, A. Deshpande, F. Luo
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引用次数: 4

摘要

如果最大结温不在制造商规定的器件允许的最高额定温度范围内,电源电子模块封装内的器件将发生故障。现代电子小型化要求多芯片模块(MCM)封装提供不同的半导体技术集成,减少组件互连数量,并降低功耗。但是每个芯片产生的大量热量在器件之间产生热耦合,导致结温升高。数据表中的电源设备规格假设设备安装在合适的散热器上。像碳化硅(SiC)器件这样的宽带隙(WBG)器件通常可以维持约175°C - 200°C的最高结温。在高密度高功率模块中,WBG器件的结温问题日益严峻。这突出了需要一个热管理系统,以限制器件的允许范围内的最大结温。因此,需要将电源模块连接到散热器上,以有效增加散热结的表面积。基于高导热材料的散热器可以有效地从模块中提取热量,因为热阻值保持较低。在本文中,对高密度高功率模块进行了初步的热分析,其中热裂解石墨(TPG)的高面内导热性在衬底和散热器设计中得到了利用。TPG将结温降低到相当低的水平,从而导致更安全的电源模块功能。本文着重于基板和散热器在模块布局方面的设计和正确对齐,以便通过适当的散热来降低最大结温,使其远低于器件的工作温度,并降低功率模块内同一平面上相邻放置的功率器件之间的热耦合程度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal Decoupling in Power Electronics Modules Using Thermal Pyrolytic Graphite
The device within a power electronics module package will fail if the maximum junction temperature is not within the device's permissible maximum temperature rating specified by the manufacturer. Modern electronic miniaturization demands multi-chip module (MCM) packaging providing different semiconductor technology integration, reduced number of component interconnects, and lower power supply. But the huge amount of heat generated by each chip produces thermal coupling among devices, leading to an increase in the junction temperature. The power device specifications in the datasheet assume the devices being mounted on a suitable heatsink. Wide bandgap (WBG) devices like silicon carbide (SiC) devices can generally sustain a maximum junction temperature of about 175 °C – 200 °C. The junction temperature of the WBG devices becomes severe in a high-density high-power module. This highlights the need for a thermal management system to limit the maximum junction temperature within the device's permissible range. As a result, the power module needs to be connected to a heatsink to effectively increase the surface area of the heat dissipation junctions. A high conductivity material based heatsink extracts heat effectively from the module as the thermal resistance value remains low. In this paper, preliminary thermal analysis is done for a high density high-power module where the high in-plane thermal conductivity of thermal pyrolytic graphite (TPG) is exploited in substrate as well as heatsink designs. TPG brings down the junction temperature to a considerably lower level, leading to a safer power module functioning. This paper focuses on the design and proper alignment of the substrate and heatsink with respect to the module layout so that maximum junction temperature is reduced by proper heat extraction far below the operating temperature of the devices and also extent of reduction of the thermal coupling among the power devices placed next to each other on the same plane within the power module.
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